Abstract:Generally, the ferroelectric capacitance under a d.c. voltage drops continuously with time, and the shape of capacitance–voltage (C–V) loops within a sweeping time more than 1 s resemble a butterfly, in comparison to the double-butterfly shape of an antiferroelectric. In this work, we developed a measuring technique for shortening sweeping time down to 500 ns for the rapid study of dielectric relaxation in ferroelectric Pb(Zr,Ti)O3 thin films. It is interestingly found that the traditional butterfly loops of a ferroelectric degenerate into double butterfly loops of an antiferroelectric when the sweeping time is sufficiently short, providing evidence of the nonlinear dielectric contribution of reversible domain motion. Reversible domains can align along a field under a voltage, but reverses back immediately into their previous directions under a reduced field strength to release their polarization charges, similarly to antiferroelectric domains. When the voltage stressing time is sufficiently long, the internal field for driving reversible domain motion is temporally screened by the injected charges accumulated in regions with different polarizations, dielectric permittivities, and conductivities (domain pinning), which results in time-dependent dielectric degradation. This charge injection is different from the traditional model of defect motion with a low mobility. Finally, we showed evidence of the charge injection from the imprint profile and reversible domain freezing into irrecoverable domains upon cooling.

Thermal Induced P r Degradation Under Low-Voltage Operation in HfZrO Ferroelectric Film: Phenomenon and Underlying Mechanism

Modeling of Endurance Degradation of Anti-Ferroelectric HF1-xZRxO2 Capacitors

Mechanism of High Temperature Hydrogen Reduced Polarization Degradation in Pb(Zr1−xTix)O3 Ferroelectric Thin Film Capacitors

Experimental Investigation of Time Dependent Dielectric Breakdown and Failure Mechanism for Hf0.5Zr0.5O2 Ferroelectric Field Effect Transistors

Low Voltage-Driven High-Performance Thermal Switching in Antiferroelectric PbZrO3 Thin Films

Temperature-dependent Polarization Back-Switching and Dielectric Nonlinearity in PbZr0.4Ti0.6O3 Ferroelectric Thin Films

Performance Improvement by Modifying Deposition Temperature in HfZrO x Ferroelectric Memory

Dielectric Degradation and Reversible Domain Motion in Ferroelectric Thin Films Evidenced by Double-Butterfly Capacitance–Voltage Loops with Sweeping Times from 500 Ns to 1 S

Observation and Characterization of Recoverable Fatigue Process Under Low-Electric Field (<1.8MV/cm) in HfZrO Ferroelectric Film

Low Thermal Budget Fabrication and Performance Comparison of MFM Capacitors with Thermal and Plasma-Enhanced Atomic Layer Deposited Hf 0.45 Zr 0.55 O X Ferroelectrics

Imprint-Correlated Retention Loss in Hf0.5Zr0.5O2 Ferroelectric Thin Film Through Wide-Temperature Characterizations

The Enhanced Polarization Switching Speed and Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Reliable Ferroelectricity Down to Cryogenic Temperature in Wake-Up Free Hf0.5Zr0.5O2 Thin Films by Thermal Atomic Layer Deposition

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf 0.5 Zr 0.5 O 2 thin films by thermal atomic layer deposition

Ferroelectricity of pristine Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films fabricated by atomic layer deposition

The Growth of Interfacial Passive Layers under Thermal Passivation of Integrated Pb(Zr,Ti)O-3 Thin Films

Remanent Polarization Reduction with Enhanced Temperature in Ferroelectric Thin Films

The Enhanced Polarization Switching Speed and Endurance in Hf0.5Zr0.5O2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Interfacial Regulation of Dielectric Properties in Ferroelectric Hf0.5Zr0.5O2 Thin Films

Effect of electrical stress on time dependent dielectric breakdown (TDDB) tolerate capability of HfO2-ZrO2 ferroelectric films with different thicknesses

Investigation of Coercive Field Shift During Cycling in HfZrO ₓ Ferroelectric Capacitors