Abstract:The wake-up phenomenon widely exists in hafnia-based ferroelectric capacitors, which causes device parameter variation over time. Crystallization at higher temperatures have been reported to be effective in eliminating wake-up, but high temperature may yield the monoclinic phase or generate high concentration oxygen vacancies. In this work, a unidirectional annealing method is proposed for the crystallization of $\mathrm{Hf_{0.5}Zr_{0.5}O_2}$ (HZO) superlattice ferroelectrics, which involves heating from the $\mathrm{Pt/ZrO_2}$ interface side. Nanoscale $\mathrm{ZrO_2}$ is selected to resist the formation of monoclinic phase, and the chemically inert Pt electrode can avoid the continuous generation of oxygen vacancies during annealing. It is demonstrated that $\mathrm{600^oC}$ annealing only leads to a moderate content of monoclinic phase in HZO, and the TiN/HZO/Pt capacitor exhibits wake-up free nature and a $2P_\mathrm{r}$ value of 27.4 $\mu\mathrm{C/cm^2}$. On the other hand, heating from the $\mathrm{TiN/HfO_2}$ side, or using $\mathrm{500^oC}$ annealing temperature, both yield ferroelectric devices that require a wake-up process. The special configuration of $\mathrm{Pt/ZrO_2}$ is verified by comparative studies with several other superlattice structures and HZO solid-state solutions. It is discovered that heating from the $\mathrm{Pt/HfO_2}$ side at $\mathrm{600^oC}$ leads to high leakage current and a memristor behavior. The mechanisms of ferroelectric phase stabilization and memristor formation have been discussed. The unidirectional heating method can also be useful for other hafnia-based ferroelectric devices.

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf 0.5 Zr 0.5 O 2 thin films by thermal atomic layer deposition

Reliable Ferroelectricity Down to Cryogenic Temperature in Wake-Up Free Hf0.5Zr0.5O2 Thin Films by Thermal Atomic Layer Deposition

Ferroelectricity of pristine Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films fabricated by atomic layer deposition

Stable Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Within a Broad Working Temperature Range

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Ferroelectricity of Hf 0.5 Zr 0.5 O2 Thin Films Free From the Influence of Electrodes by Using Al2O3 Capping Layers

Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

Inductive Crystallization Effect of Atomic-Layer-deposited Hf0.5Zr0.5O2 Films for Ferroelectric Application

Improvement of Polarization Retention at Low and High Temperatures for Hf0.5Zr0.5O2 Thin-Film Capacitors

Low Thermal Budget Fabrication and Performance Comparison of MFM Capacitors with Thermal and Plasma-Enhanced Atomic Layer Deposited Hf 0.45 Zr 0.55 O X Ferroelectrics

A Stable Rhombohedral Phase in Ferroelectric Hf(Zr)1+xO2 Capacitor with Ultralow Coercive Field.

Epitaxial Hf0.5Zr0.5O2 Films: A Temperature Dependence Study

Formation of Uniform Crystal and Reduction of Electrical Variation in HfZrO$_2$ Ferroelectric Memory by Thermal Engineering

A Study on the Hf0.5Zr0.5O2 Ferroelectric Capacitors Fabricated with Hf and Zr Chlorides

High performance and nearly wake-up free Hf 0.5 Zr 0.5 O 2 ferroelectric capacitor realized by middle layer strategy with BEOL compatibility

Observing Ferroelastic switching in Hf 0.5 Zr 0.5 O 2 Thin Film

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Excellent Reliability in Hf0.5Zr0.5O2 Based Ferroelectric Device with Oxygen-Doped ITO Electrodes

Designing wake-up free ferroelectric capacitors based on the $\mathrm{HfO_2/ZrO_2}$ superlattice structure

Excellent Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Induced by Al2O3 Dielectric Layer