Abstract:The discovery of ferroelectricity in HfO2 based materials reactivated the research on ferroelectric memory. However, the complete mechanism underlying its ferroelectricity remains to be fully elucidated. In this study, we conducted a systematic study on the microstructures and ferroelectric properties of Hf0.5Zr0.5O2 (HZO) thin films with various annealing rates in the rapid thermal annealing. It was observed that the HZO thin films with higher annealing rates demonstrate smaller grain size, reduced surface roughness and a higher portion of orthorhombic phase. Moreover, these films exhibited enhanced polarization values and better fatigue cycles compared to those treated with lower annealing rates. The grazing incidence x-ray diffraction measurements revealed the existence of tension stress in the HZO thin films, which was weakened with decreasing annealing rate. Our findings revealed that this internal stress, along with the stress originating from the top/bottom electrode, plays a crucial role in modulating the microstructure and ferroelectric properties of the HZO thin films. By carefully controlling the annealing rate, we could effectively regulate the tension stress within HZO thin films, thus achieving precise control over their ferroelectric properties. This work established a valuable pathway for tailoring the performance of HZO thin films for various applications.

Stable Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Within a Broad Working Temperature Range

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Ferroelectricity of pristine Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films fabricated by atomic layer deposition

Epitaxial Hf0.5Zr0.5O2 Films: A Temperature Dependence Study

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Excellent Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Induced by Al2O3 Dielectric Layer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

A Study on the Hf0.5Zr0.5O2 Ferroelectric Capacitors Fabricated with Hf and Zr Chlorides

Enhancement of Ferroelectricity and Homogeneity of Orthorhombic Phase in Hf0.5Zr0.5O2 Thin Films

Enhancement of ferroelectricity and homogeneity of orthorhombic phase in Hf 0.5 Zr 0.5 O 2 thin films

Improved ferroelectric properties of CMOS back-end-of-line compatible Hf0.5Zr0.5O2 thin films by introducing dielectric layers

Improvement of Polarization Retention at Low and High Temperatures for Hf0.5Zr0.5O2 Thin-Film Capacitors

Imprint-Correlated Retention Loss in Hf0.5Zr0.5O2 Ferroelectric Thin Film Through Wide-Temperature Characterizations

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf 0.5 Zr 0.5 O 2 thin films by thermal atomic layer deposition

Tensile stress regulated microstructures and ferroelectric properties of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films

Enhanced Endurance and Imprint Properties in Hf 0.5 Zr 0.5 O 2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy

Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility

Interfacial Regulation of Dielectric Properties in Ferroelectric Hf0.5Zr0.5O2 Thin Films

La-Doped HZO (La:HZO) Ferroelectric Devices Toward High-Temperature Application

Precise control of fatigue, wake-up, charge injection, and break-down in Hf0.5Zr0.5O2-based ferroelectric memories

Ferroelectric Hf0.5Zr0.5O2 Thin Films Deposited Epitaxially on (110)-Oriented SrTiO3