Abstract:Hafnium dioxide (HfO2)-based ferroelectric films are highly desirable due to their excellent compatibility with CMOS technology, good scalability, low operating voltage, and moderate polarization strength. However, the preparation of HfO2-based ferroelectric films inevitably introduces oxygen vacancies, which, under the influence of electric fields, redistribute and cause the awakening and fatigue phenomena of the films, ultimately resulting in the loss of ferroelectric performance. In this study, Hf0.5Zr0.5O2 (HZO) thin films were grown using atomic layer deposition (ALD) technology, and the influence of using different metal electrodes (W, Pt) as the top and bottom electrodes on the electrical properties of the HZO films was investigated. The leakage current of the W/HZO/W capacitor was the lowest, and the initial 2Pr at 3 V was 41.4 μC/cm2, much higher than those of the W/HZO/Pt (15.7 μC/cm2) and Pt/HZO/Pt (7.6 μC/cm2) capacitors. As the number of electric field cycles gradually increased to 104, the 2Pr values of the three capacitors changed. At this point, the 2Pr value of the W/HZO/W capacitor was 53.9 μC/cm2, and the characteristic fatigue curve was flatter, indicating a weaker wake-up effect. These results indicate that the W electrode material can effectively promote the formation of the ferroelectric phase, reduce oxygen vacancies, and suppress the wake-up effect.

Enhanced Endurance and Imprint Properties in Hf 0.5 Zr 0.5 O 2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy

Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-ferroelectric Zirconia Seed Layer for Memory Applications

The Enhanced Polarization Switching Speed and Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2interfacial layer

Enhanced Ferroelectric Polarization with Less Wake-Up Effect and Improved Endurance of Hf0.5Zr0.5O2 Thin Films by Implementing W Electrode

The Enhanced Polarization Switching Speed and Endurance in Hf0.5Zr0.5O2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

A Study on the Hf0.5Zr0.5O2 Ferroelectric Capacitors Fabricated with Hf and Zr Chlorides

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

A Novel Hafnia-based Ferroelectric Capacitor with Antiferroelectric Zirconia Seed Layer for High Ferroelectricity and Endurance

High Endurance and Low Fatigue Effect of Bilayer Stacked Antiferroelectric/Ferroelectric Hf x Zr 1- x O 2

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode

Interface-Roughness Effect on Polarization Switching and Reliability Performance of Doped-HfO 2 Capacitors

High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films

Excellent Reliability in Hf0.5Zr0.5O2 Based Ferroelectric Device with Oxygen-Doped ITO Electrodes

Oxygen scavenging of HfZrO2-based capacitors for improving ferroelectric properties

Modulation of Oxygen Content and Ferroelectricity in Sputtered Hafnia‐Zirconia by Engineering of Tungsten Oxide Bottom Electrodes

High endurance (>1012) via optimized polarization switching ratio for Hf0.5Zr0.5O2-based FeRAM

Effects of Different Metal Electrodes on the Ferroelectric Properties of HZO Thin Films

Dual Al₂O₃/Hf₀.₅Zr₀.₅O₂ Stack Thin Films for Improved Ferroelectricity and Reliability

High performance and nearly wake-up free Hf 0.5 Zr 0.5 O 2 ferroelectric capacitor realized by middle layer strategy with BEOL compatibility