Abstract:HfO 2 -based ferroelectric memory is one of the most attractive candidates for embedded memory in future monolithic-M3D integrated-circuit (IC). However, ferroelectricity and endurance will degrade at lower annealing temperatures due to the limitation of the M3D-IC in thermal budget, which significantly inhibits its potential for many applications. In this work, a novel process technology using As 5+ implantation (As-imp) at the bottom electrode (BE) in TiN/Hf 0.5 Zr 0.5 O 2 (HZO)/TiN capacitors is proposed. The HZO film shows excellent ferroelectricity and improves endurance at the annealing temperatures of 350 and 400 °C, especially when the dose of As-imp is 1 × 10 16 , where the endurance of the HZO film is up to 1.5 × 10 11 , and the remnant polarization ( P r ) far exceeds the reference capacitor without BE As-imp, where 2P r is greater than 40 °C cm −2 after 1.5 × 10 11 cycles. The underlying physical mechanism is that the oxidation reaction of introduced As 5+ during the film deposition releases extra oxygen atoms to fill the oxygen vacancies ( V o ) near the BE interface due to the occurrence of the thermal reduction reaction in the subsequent annealing process. This study paves the way for the integration of HZO-based ferroelectric embedded memory in future high-performance and energy-efficient 3D-ICs.

A Novel Hafnia-based Ferroelectric Capacitor with Antiferroelectric Zirconia Seed Layer for High Ferroelectricity and Endurance

Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-ferroelectric Zirconia Seed Layer for Memory Applications

Back-End of Line Compatible Hf0.5Zr0.5O2 with ZrO2 Seed Layer for Enhanced Ferroelectricity

Dual Al₂O₃/Hf₀.₅Zr₀.₅O₂ Stack Thin Films for Improved Ferroelectricity and Reliability

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2interfacial layer

Back-End of Line Compatible Hf 0.5 Zr 0.5 O 2 with ZrO 2 Seed Layer for Enhanced Ferroelectricity

High Endurance and Low Fatigue Effect of Bilayer Stacked Antiferroelectric/Ferroelectric Hf x Zr 1- x O 2

HfO2-ZrO2 Superlattice Ferroelectric Capacitor with Improved Endurance Performance and Higher Fatigue Recovery Capability

High performance and nearly wake-up free Hf 0.5 Zr 0.5 O 2 ferroelectric capacitor realized by middle layer strategy with BEOL compatibility

HfO 2 -ZrO 2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability

Enhanced Endurance and Imprint Properties in Hf 0.5 Zr 0.5 O 2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy

A Stable Rhombohedral Phase in Ferroelectric Hf(Zr)1+xO2 Capacitor with Ultralow Coercive Field.

High Performance and Nearly Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Capacitor Realized by Middle Layer Strategy with BEOL Compatibility

La Doped HZO based 3D-Trench Metal-Ferroelectric-Metal Capacitors with High Endurance (>10 12 ) for FeRAM Applications

High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films

Back-End-of-Line Compatible HfO2/ZrO2 Superlattice Ferroelectric Capacitor with High Endurance and Remnant Polarization

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

Enhanced Memory Properties of HfO2-based Ferroelectric Capacitor by Inserting Al2O3/ZrO2 Stack Interfacial Layer

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Enhanced Ferroelectric Polarization with Less Wake-Up Effect and Improved Endurance of Hf0.5Zr0.5O2 Thin Films by Implementing W Electrode

A Study on the Hf0.5Zr0.5O2 Ferroelectric Capacitors Fabricated with Hf and Zr Chlorides