Coding and non-coding polymorphisms in the lectin pathway activator L-ficolin gene in 188 Dutch blood bank donors.

B. Herpers,M. Immink,B. D. de Jong,H. van Velzen-Blad,B. D. de Jongh,E. V. van Hannen

DOI: https://doi.org/10.1016/J.MOLIMM.2005.06.035

IF: 4.174

2006-03-01

Molecular Immunology

Abstract:

What problem does this paper attempt to address?

High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films

Jike Lyu,Tingfeng Song,Ignasi Fina,Florencio Sánchez

DOI: https://doi.org/10.1039/d0nr02204g

2020-05-29

Abstract:Ferroelectric HfO$_2$ is a promising material for new memory devices, but significant improvement of important properties is necessary to reach applications. However, precedent literature shows that a dilemma between polarization, endurance and retention exists. Since all these properties should be simultaneously high, overcoming this issue is of the highest relevance. Here, we demonstrate that high crystalline quality sub-5 nm Hf0.5Zr0.5O2 capacitors, integrated epitaxially with Si(001), present combined high polarization (2Pr of 27 uC/cm2 in the pristine state), endurance (2Pr > 6 uC/cm2 after E11 cycles) and retention (2Pr > 12 uC/cm2 extrapolated at 10 years) using same poling conditions (2.5 V). This achievement is demonstrated in films thinner than 5 nm, thus opening bright possibilities in ferroelectric tunnel junctions and other devices.

Applied Physics,Materials Science
Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates

J. Lyu,I. Fina,R. Bachelet,G. Saint-Girons,S. Estandia,J. Gazquez,J. Fontcuberta,F. Sanchez

DOI: https://doi.org/10.1063/1.5096002

2019-06-05

Abstract:SrTiO3 templates have been used to integrate epitaxial bilayers of ferroelectric Hf0.5Zr0.5O2 and La2/3Sr1/3MnO3 bottom electrode on Si(001). The Hf0.5Zr0.5O2 films show enhanced properties in comparison to equivalent films on SrTiO3(001) single crystalline substrates. The films, thinner than 10 nm, have very high remnant polarization of 34 uC/cm2. Hf0.5Zr0.5O2 capacitors at operating voltage of 4 V present long retention time well beyond 10 years and high endurance against fatigue up to 109 cycles. The robust ferroelectric properties displayed by the epitaxial Hf0.5Zr0.5O2 films on Si(001) using SrTiO3 templates paves the way for the monolithic integration on silicon of emerging memory devices based on epitaxial HfO2.

Applied Physics,Mesoscale and Nanoscale Physics
Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance

Jike Lyu,Ignasi Fina,Josep Fontcuberta,Florencio Sánchez

DOI: https://doi.org/10.1021/acsami.8b18762

2019-02-15

Abstract:Epitaxial ferroelectric Hf0.5Zr0.5O2 films have been successfully integrated in a capacitor heterostructure on Si(001). The orthorhombic Hf0.5Zr0.5O2 phase, [111] out-of-plane oriented, is stabilized in the films. The films present high remnant polarization Pr close to 20 {\mu}C/cm2, rivaling with equivalent epitaxial films on single crystalline oxide substrates. Retention time is longer than 10 years for writing field of around 5 MV/cm, and the capacitors show endurance up to 1E9 cycles for writing voltage of around 4 MV/cm. It is found that the formation of the orthorhombic ferroelectric phase depends critically on the bottom electrode, being achieved on La0.67Sr0.33MnO3 but not on LaNiO3. The demonstration of excellent ferroelectric properties in epitaxial films of Hf0.5Zr0.5O2 on Si(001) is relevant towards fabrication of devices that require homogeneity in the nanometer scale, as well as for better understanding of the intrinsic properties of this promising ferroelectric oxide.

Applied Physics,Materials Science
Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Guoliang Tian,Gaobo Xu,Huaxiang Yin,Gangping Yan,Zhaohao Zhang,Lianlian Li,Xiaoting Sun,Jia Chen,Yadong Zhang,Jinshun Bi,Jinjuan Xiang,Jinbiao Liu,Zhenhua Wu,Jun Luo,Wenwu Wang

DOI: https://doi.org/10.1002/admi.202102351

IF: 5.4

2022-08-05

Advanced Materials Interfaces

Abstract:HfO 2 -based ferroelectric memory is one of the most attractive candidates for embedded memory in future monolithic-M3D integrated-circuit (IC). However, ferroelectricity and endurance will degrade at lower annealing temperatures due to the limitation of the M3D-IC in thermal budget, which significantly inhibits its potential for many applications. In this work, a novel process technology using As 5+ implantation (As-imp) at the bottom electrode (BE) in TiN/Hf 0.5 Zr 0.5 O 2 (HZO)/TiN capacitors is proposed. The HZO film shows excellent ferroelectricity and improves endurance at the annealing temperatures of 350 and 400 °C, especially when the dose of As-imp is 1 × 10 16 , where the endurance of the HZO film is up to 1.5 × 10 11 , and the remnant polarization ( P r ) far exceeds the reference capacitor without BE As-imp, where 2P r is greater than 40 °C cm −2 after 1.5 × 10 11 cycles. The underlying physical mechanism is that the oxidation reaction of introduced As 5+ during the film deposition releases extra oxygen atoms to fill the oxygen vacancies ( V o ) near the BE interface due to the occurrence of the thermal reduction reaction in the subsequent annealing process. This study paves the way for the integration of HZO-based ferroelectric embedded memory in future high-performance and energy-efficient 3D-ICs.

materials science, multidisciplinary,chemistry
Ultrahigh Dielectric Permittivity and Ferroelectric Polarization in Size-Scaled Hf0.5Zr0.5O2 Thin-Film Capacitors

An Quan Jiang,Wendi Zhang,Jun Jiang,Yan Cheng

DOI: https://doi.org/10.21203/rs.3.rs-3086539/v1

2023-01-01

Abstract:The ever-shrinking electrostatic capacitor with its high dielectric permittivity and ferroelectric polarization can store large quantities of electrical charge and energy for compact electronics and electrical power systems, leading to applications including volatile/nonvolatile high-storage-density memories and energy-efficient complementary metal-oxide-semiconductor (CMOS) devices. Innovative use of CMOS-compatible HfO 2 -based materials with high permittivities of 27–52 and polarizations of 17–50 μC/cm 2 could foster their integration into few-nanometre-scale devices. Here we report giant remanent polarization of 331 μC/cm 2 for a 0.3-μm-sized Hf 0.5 Zr 0.5 O 2 thin-film capacitor, combined with ultrahigh linear permittivity of ≥921, stored charge density of 295 μC/cm 2 and energy density of 566 J/cm 3 within a 4.4-μm-sized capacitor when the material’s ferroelectricity disappears suddenly after polarization fatigue, much better than relaxor ferroelectric thin films (133–152 J/cm 3 ). The giant polarization originates from formation of high-density Zr-rich polar clusters near the edge region of the Hf 0.5 Zr 0.5 O 2 thin-film capacitor after plasma treatment and remains unchanged at low temperatures. This enables high-density integration of extremely scaled logic and memory devices for low-voltage operation.
Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility

Yuting Chen,Yang Yang,Peng Yuan,Pengfei Jiang,Yuan Wang,Yannan Xu,Shuxian Lv,Yaxin Ding,Zhiwei Dang,Zhaomeng Gao,Tiancheng Gong,Yan Wang,Qing Luo

DOI: https://doi.org/10.1007/s12274-021-3896-8

IF: 9.9

2021-11-12

Nano Research

Abstract:Flexible memory devices are promising for information storage and data processing applications in portable, wearable, and smart electronics operating under curved conditions. In this work, we realized high-performance flexible ferroelectric capacitors based on Hf0.5Zr0.5O2 (HZO) thin film by depositing a buffer layer of Al2O3 on polyimide (PI) substrates using atomic layer deposition (ALD). The flexible ferroelectric HZO films exhibit high remnant polarization (Pr) of 21 µC/cm2. Furthermore, deterioration of polarization, retention, and endurance performance was not observed even at a bending radius of 2 mm after 5,000 bending cycles. This work marks a critical step in the development of high-performance flexible HfO2-based ferroelectric memories for next-generation wearable electronic devices.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology
A Stable Rhombohedral Phase in Ferroelectric Hf(Zr)1+xO2 Capacitor with Ultralow Coercive Field.

Yuan Wang,Lei Tao,Roger Guzman,Qing Luo,Wu Zhou,Yang,Yingfen Wei,Yu Liu,Pengfei Jiang,Yuting Chen,Shuxian Lv,Yaxin Ding,Wei,Tiancheng Gong,Yan Wang,Qi Liu,Shixuan Du,Ming Liu

DOI: https://doi.org/10.1126/science.adf6137

IF: 56.9

2023-01-01

Science

Abstract:Hafnium oxide-based ferroelectric materials are promising candidates for next-generation nanoscale devices because of their ability to integrate into silicon electronics. However, the intrinsic high coercive field of the fluorite-structure oxide ferroelectric devices leads to incompatible operating voltage and limited endurance performance. We discovered a complementary metal-oxide semiconductor (CMOS)-compatible rhombohedral ferroelectric Hf(Zr)1+xO2 material rich in hafnium-zirconium [Hf(Zr)]. X-ray diffraction combined with scanning transmission electron microscopy reveals that the excess Hf(Zr) atoms intercalate within the hollow sites. We found that the intercalated atoms expand the lattice and increase the in-plane and out-of-plane stresses, which stabilize both the rhombohedral phase (r-phase) and its ferroelectric properties. Our ferroelectric devices, which are based on the r-phase Hf(Zr)1+xO2, exhibit an ultralow coercive field (~0.65 megavolts per centimeter). Moreover, we achieved a high endurance of more than 1012 cycles at saturation polarization. This material discovery may help to realize low-cost and long-life memory chips.
Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2interfacial layer

Wei Zhang,Yuxuan Shi,Bowen Zhang,Zengqiang Liu,Yating Cao,Ting Pan,Yubao Li

DOI: https://doi.org/10.1088/1361-6528/ad6871

IF: 3.5

2024-08-06

Nanotechnology

Abstract:Recently discovered ferroelectricity in fluorite-structure ZrO2thin film has attracted increasing and intense interest due to its lower crystallization temperature and higher content in nature in comparison to hafnium oxide. Here, the effect of HfO2interfacial layer on the ferroelectric properties of ZrO2thin films is investigated systematically by designing four types of interfacial structures. It is revealed that the ferroelectric orthorhombic phase, remanent polarization, and endurance can be improved in ZrO2thin film by inserting both a top- and bottom-HfO2interfacial layer. A maximal ferroelectric remanent polarization (2Pr) of 53.4μC cm-2and an optimal endurance performance of 3 × 107field cycles under frequency of 100 kHz are achieved in Pt/HfO2/ZrO2/HfO2/Pt capacitors, with ferroelectric stacks being crystallized at 450 °C via post-deposition annealing method. X-ray photoelectron spectroscopy analysis confirms that the HfO2bottom-layer plays a very important role in the formation of a higher ratio o-phase, thus enhancing the ferroelectricity. These results suggest that designing appropriate interfaces would help achieve excellent ferroelectric properties in ZrO2films.
The Enhanced Polarization Switching Speed and Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Yu-Chun Li,Xiao-Xi Li,Zi-Ying Huang,Xiao-Na Zhu,David Wei Zhang,Hong-Liang Lu

DOI: https://doi.org/10.1109/led.2024.3379499

IF: 4.8157

2024-01-01

IEEE Electron Device Letters

Abstract:In this letter, the ferroelectric capacitors featuring Hf0.5Zr0.5O2 films with different oxygen dose have been constructed. It is found that the sample grown at oxygen-deficient condition exhibits a smaller remanent polarization (Pr), a larger dielectric constant (εr), a faster switching and better cycle reliability (over 108 @ 4 MV/cm). The connection between its better reliability and polarization switching speed with its dielectric and ferroelectric properties is established with the switching-induced charge-injection model. The larger interfacial depolarization field (Edep) impedes the domain switching at the early nucleation process and wears out the metal/ferroelectric interface, leading to the endurance degradation. Our work reveals that the oxygen-deficient sample with a smaller Pr and a large εr shows a smaller Edep near the interface, tend to switch faster, thus also benefits the reliability. It provides better understanding of process modulating domain switch kinetics and reliability in HfO2 based ferroelectric devices from both theoretical and experiment perspective.

engineering, electrical & electronic
Enhanced Endurance and Imprint Properties in Hf 0.5 Zr 0.5 O 2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy

Keyu Bao,Jiajia Liao,Fei Yan,Shijie Jia,Binjian Zeng,Qiong Yang,Min Liao,Yichun Zhou

DOI: https://doi.org/10.1021/acsaelm.3c00756

IF: 4.494

2023-08-10

ACS Applied Electronic Materials

Abstract:HfO2-based ferroelectric thin films are promising in both memory and logic devices owing to their compatibility with complementary metal-oxide-semiconductor platforms and excellent thickness scalability. However, the fatigue and imprint effect are the main concerns, hindering the device’s applications. In this work, we comprehensively investigate the impact of oxygen vacancies on the reliability of Hf0.5Zr0.5O2−δ (HZO) ferroelectric capacitors. The oxygen vacancy concentration was tailored by varying the exposure time of the H2O precursor and oxygen plasma during atomic layer deposition. By decreasing the oxygen vacancy concentration to 1.9%, the endurance is enhanced owing to the suppression of defect migration under field cycling. In addition, a milder imprint with coercive field shift of below 0.6 MV/cm under 120 °C is obtained, benefiting from the alleviation of the built-in field at the ferroelectric/metal interfaces. The fabricated HZO capacitors with considerable remnant polarization show superior reliability compared with the reported ones.

materials science, multidisciplinary,engineering, electrical & electronic
Effects of thickness and anisotropic strain on polarization switching properties of sub-10 nm epitaxial Hf 0.5 Zr 0.5 O 2 thin films

Kuan Liu,Kai Liu,Xingchang Zhang,Jie Fang,Feng Jin,Wenbin Wu,Chao Ma,Lingfei Wang

DOI: https://doi.org/10.1088/0256-307x/41/11/117701

2024-09-28

Chinese Physics Letters

Abstract:Doped HfO 2 -based ferroelectric (FE) films are emerging as leading contenders for the next generation of FE non-volatile memory due to their excellent compatibility with complementary metal oxide semiconductor processes and robust ferroelectricity at nanoscale dimensions. Despite the considerable attention given to the FE properties of HfO 2 -based films in recent years, enhancing their polarization switching speed remains a critical research challenge. In this study, we demonstrate the strong ferroelectricity of sub-10 nm Hf 0.5 Zr 0.5 O 2 (HZO) thin films and show that the polarization switching speed of these thin films can be significantly affected by HZO thickness and anisotropically-strained LSMO-buffered layer. Our observations indicate that the the HZO thin film thickness and anisotropically-strained LSMO layer influence the nucleation of reverse domains by altering the phase composition of the HZO thin film, thereby reducing the polarization switching time. Although the increase in HZO thickness and anisotropic compressive strain hinder the formation of the FE phase, they can enable faster switching. Our findings suggest that FE HZO ultrathin films with polar orthorhombic structures have broad application prospects in microelectronic devices. These insights into novel methods for increasing polarization switching speed are poised to advance the development of high-performance FE devices.

physics, multidisciplinary
Back-End-of-Line Compatible HfO2/ZrO2 Superlattice Ferroelectric Capacitor with High Endurance and Remnant Polarization

Boyao Cui,Xuepei Wang,Yuchun Li,Maokun Wu,Yishan Wu,Jinhao Liu,Xiaoxi Li,Pengpeng Ren,Sheng Ye,Zhigang Ji,Hongliang Lu,Runsheng Wang,David Wei Zhang,Ru Huang

DOI: https://doi.org/10.1109/led.2023.3265516

IF: 4.8157

2023-01-01

IEEE Electron Device Letters

Abstract:The hafnium-zirconium oxide (HZO) has been reported to be a promising candidate for low-power VLSI logic and memory applications. However, the demand for high processing temperatures above 500 °C keeps it away from the Back-End-of-Line (BEOL) process. Many reports have explored various methods to facilitate the formation of orthorhombic phases at lower temperatures, but these methods have typically resulted in low remnant polarization ( ${P}\text{r}$ ) and poor reliability due to poor crystallinity and oxygen vacancy (Ov) accumulation. To address these challenges, we have chosen tungsten (W) as the capping electrode due to its superior capability for inducing orthorhombic phases. We have also replaced the conventional HZO layer with a stacked HfO2-ZrO2 superlattice with optimized Ov distribution and improved crystallinity. As a result, our sample processed at 400 °C exhibits a maximum $2{P}\text{r}$ of $32 ~\mu \text{C}$ /cm2 at 2.5 MV/cm. It demonstrates the stable endurance cycles up to ${2} \times {10} ^{{9}}$ exceeding the performance of the W-HZO control sample and remaining competitive with the most recent results in the literature.
Improvement of Polarization Retention at Low and High Temperatures for Hf0.5Zr0.5O2 Thin-Film Capacitors

Wen Di Zhang,An Quan Jiang

DOI: https://doi.org/10.1109/led.2024.3400956

IF: 4.8157

2024-01-01

IEEE Electron Device Letters

Abstract:Generally the remanent polarization of pristine Hf 0.5 Zr 0.5 O 2 thin films increases after the wakeup performance at room temperature. However, the improved polarization has poor retention at other temperatures. Here we studied its temperature dependence of polarization retention after the wakeup at 450 K without invoking of dielectric breakdown. This high-temperature treatment can symmetrize polarization-voltage hysteresis loops with the remanent polarization that is stable against retention time between 220 and 450 K. Otherwise, the remanent polarization decays more than 60% at high and low temperatures. This finding provides a robust solution to improve the polarization retention of Hf 0.5 Zr 0.5 O 2 thin films to meet the standard requirement of working temperatures of non-volatile memories.
The Enhanced Polarization Switching Speed and Endurance in Hf0.5Zr0.5O2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Yu-Chun Li,Xiao-Xi Li,Zi-Ying Huang,Xiao-Na Zhu,David Wei Zhang,Hong-Liang Lu

DOI: https://doi.org/10.1109/led.2024.3379499

IF: 4.8157

2024-01-01

IEEE Electron Device Letters

Abstract:In this letter, the ferroelectric capacitors featuring Hf 0.5 Zr 0.5 O 2 films with different oxygen dose have been constructed. It is found that the sample grown at oxygen-deficient condition exhibits a smaller remanent polarization (P r ), a larger dielectric constant (ε r ), a faster switching and better cycle reliability (over 10 8 @ 4 MV/cm). The connection between its better reliability and polarization switching speed with its dielectric and ferroelectric properties is established with the switching-induced charge-injection model. The larger interfacial depolarization field ( E dep ) impedes the domain switching at the early nucleation process and wears out the metal/ferroelectric interface, leading to the endurance degradation. Our work reveals that the oxygen-deficient sample with a smaller P r and a large ε r shows a smaller E dep near the interface, tend to switch faster, thus also benefits the reliability. It provides better understanding of process modulating domain switch kinetics and reliability in HfO 2 based ferroelectric devices from both theoretical and experiment perspective.
Inductive Crystallization Effect of Atomic-Layer-deposited Hf0.5Zr0.5O2 Films for Ferroelectric Application

Xun Zhang,Lin Chen,Qing-Qing Sun,Lu-Hao Wang,Peng Zhou,Hong-Liang Lu,Peng-Fei Wang,Shi-Jin Ding,David Wei Zhang

DOI: https://doi.org/10.1186/s11671-014-0711-4

2015-01-01

Nanoscale Research Letters

Abstract:Ferroelectric Hf x Zr1-x O2 thin films are considered promising candidates for future lead-free CMOS-compatible ferroelectric memory application. The inductive crystallization behaviors and the ferroelectric performance of Hf0.5Zr0.5O2 thin films prepared by atomic layer deposition were investigated. Inductive crystallization can be induced by the film growth condition and appropriate top electrode selection. In this work, a Ni/Hf0.5Zr0.5O2/Ru/Si stack annealed at 550°C for 30 s in N2 ambient after the Ni top electrode has been deposited was manufactured, and it shows the best ferroelectric hysteresis loop in the dielectric thickness of 25 nm, with a remanent polarization value of 6 μC/cm2 and a coercive field strength of 2.4 MV/cm measured at 10 kHz. Endurance, retention, and domain switching current characteristics were evaluated well for potential application in the field of ferroelectric field effect transistor (FeFET) and nonvolatile ferroelectric memories (FeRAM).
Excellent Reliability in Hf0.5Zr0.5O2 Based Ferroelectric Device with Oxygen-Doped ITO Electrodes

Jinna Zhang,Jiajie Yu,Zhenhai Li,Kangli Xu,Yongkai Liu,Jialin Meng,Hao Zhu,Qingqing Sun,Xiaojian Zhu,David Wei Zhang,Lin Chen

DOI: https://doi.org/10.1109/led.2024.3472060

IF: 4.8157

2024-01-01

IEEE Electron Device Letters

Abstract:Hafnium-based ferroelectric memory has become an attractive candidate for next-generation storage technology due to its high write/read speed and low power consumption. In this paper, a highly reliable ferroelectric memory device based on zirconium-doped hafnium oxide (HZO) using oxide (indium tin oxide) electrodes is proposed. The devices have excellent ferroelectric properties with an initial remnant polarization (2P r ) up to 53.8 μC/cm 2 . It also demonstrates great endurance, maintaining 2P r > 33 μC/cm 2 even after 10 12 cycles, and shows exceptional reliability at both high and low frequencies. This study provides important insights into the fatigue phenomenon and an effective strategy for the development of reliable hafnium-based ferroelectric devices.
A Study on the Hf0.5Zr0.5O2 Ferroelectric Capacitors Fabricated with Hf and Zr Chlorides

Yujin Kim,Zhan Liu,Hao Jiang,T.P. Ma,Jun-Fei Zheng,Phil Chen,Eric Condo,Bryan Hendrix,James A. O'Neill

DOI: https://doi.org/10.1109/cstic55103.2022.9856746

2022-01-01

Abstract:Ferroelectric capacitor memory devices with carbon-free Hf0.5Zr0.5O2 (HZO) ferroelectric films are fabricated and characterized. The HZO ferroelectric films are deposited by ALD at temperatures from 225 to 300°C, with HfCl4 and ZrCl4 as the precursors. Residual chlorine from the precursors is measured and studied systematically with various process temperatures. 10nm HZO films with optimal ALD growth temperature at 275°C exhibit remanent polarization of 25µC/cm2 and cycle endurance of ~ 5×1011. Results will be compared with those from HZO films deposited with carbon containing metal-organic precursors.
A Novel Hafnia-based Ferroelectric Capacitor with Antiferroelectric Zirconia Seed Layer for High Ferroelectricity and Endurance

Mengxuan Yang,Kaifeng Wang,Bocheng Yu,Zhiyuan Fu,Chang Su,Ru Huang,Qianqian Huang

DOI: https://doi.org/10.1109/edtm58488.2024.10511327

2024-01-01

Abstract:In this work, a new $\mathrm{Hf}\_{0.5} \mathrm{Zr}\_{0.5} \mathrm{O}\_{2}$ (HZO)-based ferroelectric (FE) capacitor with a T-phase-dominated anti-ferroelectric (AFE) ZrO 2 seed layer is proposed and experimentally demonstrated, with enhanced ferroelectricity and endurance behavior simultaneously compared with conventional HZO FE capacitor or O-phase-dominated $\mathrm{ZrO}_{2} / \mathrm{HZO}$ capacitor. The endurance of fabricated $\mathrm{AFE}-\mathrm{ZrO}_{2} / \mathrm{FE}-\mathrm{HZO}$ stacked capacitor can be improved to more than $10^{9}$ while still ensuring high remanent polarization $\left(\mathrm{P}_{\mathrm{r}}\right)$, benefiting from the extracted extremely-low M phase ratio (3.7%) in HZO, the lower trap charge density (about 12% reduction) and the slower leakage current growth rate in the interface, which indicates its great potential for FE memory applications.
A Flexible Hf0.5Zr0.5O2 Thin Film with Highly Robust Ferroelectricity

Xiang Zhou,Haoyang Sun,Jiachen Li,Xinzhe Du,He Wang,Zhen Luo,Zijian Wang,Yue Lin,Shengchun Shen,Yuewei Yin,Xiaoguang Li

DOI: https://doi.org/10.1016/j.jmat.2023.05.010

IF: 8.589

2023-01-01

Journal of Materiomics

Abstract:Flexible hafnia-based ferroelectric memories are arousing much interest with the ever-growing demands for nonvolatile data storage in wearable electronic devices. Here, high-quality flexible Hf0.5Zr0.5O2 membranes with robust ferroelectricity were fabricated on inorganic pliable mica substrates via an atomic layer deposition technique. The flexible Hf0.5Zr0.5O2 thin membranes with a thickness of ∼8 nm exhibit a high remanent polarization of ∼16 μC/cm2, which possess very robust polarization switching endurance (>1010 cycles, two orders of magnitude better than reported flexible HfO2-based films) and superior retention ability (expected >10 years). In particular, stable ferroelectric polarization as well as excellent endurance and retention performance show negligible degradations under 6 mm radius bending conditions or after 104 bending cycles with a 6 mm bending radius. These results mark a crucial step in the development of flexible hafnium oxide-based ferroelectric memories for wearable electronic devices.
Interface-Roughness Effect on Polarization Switching and Reliability Performance of Doped-HfO 2 Capacitors

Yueyuan Zhang,Yue Peng,Fenning Liu,Kaixuan Li,Ni Zhong,Yan Liu,Yue Hao,Genquan Han

DOI: https://doi.org/10.1109/ted.2023.3279064

IF: 3.1

2023-06-23

IEEE Transactions on Electron Devices

Abstract:In this article, the influence of interface roughness on the ferroelectric (FE) performance of Hf 0.5 Zr 0.5 O 2 (HZO) films was experimentally investigated. The HZO capacitor with a rough interface structure shows a higher remnant polarization ( than that with a flat interface structure. However, although the device with the rough interface can achieve an improved value, it generates a higher electric field within the HZO film and causes more obvious charge injection at the TaON/HZO interface, leading to the increase of interface traps ( and leakage current ( as well as the degradation of endurance. The study is helpful for understanding and optimizing the growth technics of HfO 2 -based FE memory for advanced node technology.

engineering, electrical & electronic,physics, applied

Coding and non-coding polymorphisms in the lectin pathway activator L-ficolin gene in 188 Dutch blood bank donors.

High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films

Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates

Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Ultrahigh Dielectric Permittivity and Ferroelectric Polarization in Size-Scaled Hf0.5Zr0.5O2 Thin-Film Capacitors

Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility

A Stable Rhombohedral Phase in Ferroelectric Hf(Zr)1+xO2 Capacitor with Ultralow Coercive Field.

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2interfacial layer

The Enhanced Polarization Switching Speed and Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Enhanced Endurance and Imprint Properties in Hf 0.5 Zr 0.5 O 2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy

Effects of thickness and anisotropic strain on polarization switching properties of sub-10 nm epitaxial Hf 0.5 Zr 0.5 O 2 thin films

Back-End-of-Line Compatible HfO2/ZrO2 Superlattice Ferroelectric Capacitor with High Endurance and Remnant Polarization

Improvement of Polarization Retention at Low and High Temperatures for Hf0.5Zr0.5O2 Thin-Film Capacitors

The Enhanced Polarization Switching Speed and Endurance in Hf0.5Zr0.5O2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Inductive Crystallization Effect of Atomic-Layer-deposited Hf0.5Zr0.5O2 Films for Ferroelectric Application

Excellent Reliability in Hf0.5Zr0.5O2 Based Ferroelectric Device with Oxygen-Doped ITO Electrodes

A Study on the Hf0.5Zr0.5O2 Ferroelectric Capacitors Fabricated with Hf and Zr Chlorides

A Novel Hafnia-based Ferroelectric Capacitor with Antiferroelectric Zirconia Seed Layer for High Ferroelectricity and Endurance

A Flexible Hf0.5Zr0.5O2 Thin Film with Highly Robust Ferroelectricity

Interface-Roughness Effect on Polarization Switching and Reliability Performance of Doped-HfO 2 Capacitors