Abstract:Here, composition‐graded Hf1‐xZrxO2 ferroelectric thin films possessing more than two times faster polarization switching speed and better endurance characteristics than the conventional composition‐uniform one are demonstrated. The transition of polarization switching dynamics from the nucleation‐limited‐switching mechanism to the domain‐wall growth mechanism is responsible for these enhanced properties in the composition‐graded Hf1‐xZrxO2 thin films. The next‐generation semiconductor memories are essentially required for the advancements in modern electronic devices. Ferroelectric memories by HfO2‐based ferroelectric thin films (FE‐HfO2) have opened promising directions in recent years. Nevertheless, improving the polarization switching speed of FE‐HfO2 remains a critical task. In this study, it is demonstrated that the composition‐graded Hf1‐xZrxO2 (HZO) ferroelectric thin film has more than two times faster polarization switching speed than the conventional composition‐uniform one. Meanwhile, it has excellent ferroelectricity and improved endurance characteristics. It is also discovered that when the HZO thin film has a gradient composition, the polarization‐switching dynamics shifts from the nucleation‐limited‐switching mechanism to the domain‐wall growth mechanism. Moreover, the transition of switching dynamics is responsible for the faster speed and better endurance of the composition‐graded HZO thin film. These findings not only reveal the physical mechanisms of this material system but also provide a new strategy for memory devices having faster speed and higher endurance.

The Enhanced Polarization Switching Speed and Endurance in Hf0.5Zr0.5O2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

The Enhanced Polarization Switching Speed and Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Switching Dynamics of Ferroelectric HfO2-ZrO2 with Various ZrO2 Contents

Enhanced Endurance and Imprint Properties in Hf 0.5 Zr 0.5 O 2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy

Interface-Roughness Effect on Polarization Switching and Reliability Performance of Doped-HfO 2 Capacitors

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2interfacial layer

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

Effect of Domain Structure and Dielectric Interlayer on Switching Speed of Ferroelectric Hf0.5Zr0.5O2 Film

Highly Enhanced Polarization Switching Speed in HfO2‐based Ferroelectric Thin Films via a Composition Gradient Strategy

Oxygen Vacancy Modulation with TiO₂ Stack Interface Engineering for Ferroelectric Hf0.5Zr0.5O₂ Thin Films

Effects of thickness and anisotropic strain on polarization switching properties of sub-10 nm epitaxial Hf 0.5 Zr 0.5 O 2 thin films

HfO2-ZrO2 Ferroelectric Capacitors with Superlattice Structure: Improving Fatigue Stability, Fatigue Recovery, and Switching Speed

High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films

Enhanced Ferroelectric Polarization with Less Wake-Up Effect and Improved Endurance of Hf0.5Zr0.5O2 Thin Films by Implementing W Electrode

Ultrafast Switching of Ferroelectric HfO2-ZrO2 under Low Voltage with Layered Structure

Electrochemical control of ferroelectricity in hafnia-based ferroelectric devices using reversible oxygen migration

A Comparative Study on the Polarization, Reliability, and Switching Dynamics of HfO 2 -ZrO 2 -HfO 2 and ZrO 2 -HfO 2 -ZrO 2 Superlattice Ferroelectric Films

Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping

Anomalous polarization-switching phenomena and noteworthy pyroelectricity in ferroelectric Hf0.5Zr0.5O2 polycrystalline films