Abstract:The discovery of ferroelectricity in hafnia-based materials have boosted the potential of incorporating ferroelectrics in advanced electronics, thanks to their compatibility with silicon technology. However, comprehending why these materials defy the common trend of reduced ferroelectric ordering at the nanoscale, and the mechanism that stabilizes the ferroelectric phase (absent in hafnia phase diagram) presents significant challenges to traditional knowledge of ferroelectricity. In this work, we show that the formation of the orthorhombic ferroelectric phase (o-FE, space group Pca21) of the single-crystalline epitaxial films of 10% La-doped HfO2 (LHO) on (111)-oriented yttria stabilized zirconia (YSZ) relies on the stability of the high-pressure orthorhombic antiferroelectric phase (o-AFE, space group Pbca). Our detailed structural characterizations demonstrate that as-grown LHO films represent largely the o-AFE phase being thermodynamically stabilized by the compressive strain. Our Kelvin probe force microscopy studies show, under mechanical poling, the o-AFE phase is converted to the o-FE phase which remains stable under ambient conditions. We find that the orthorhombic phase stability is enhanced in thinner films down to one-unit-cell thickness, a trend that is unknown in any other ferroelectric films. This is due to the vanishing depolarization field of the o-AFE phase and the isomorphic LHO/YSZ interface, supporting strain-enhanced ferroelectricity in the ultrathin films. This results in an unprecedented increase of the Curie temperature up to 850 °C, the highest reported for sub-nanometer-thick ferroelectrics. Overall, our findings opens the way for advanced engineering of hafnia-based materials for ferroelectric applications and heralding a new frontier of high-temperature ferroelectrics at the two-dimensional limit.

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films

Enhancement of the Ferroelectricity by Interface Engineering Observed by in Situ Transmission Electron Microscope

Stability of ferroelectric and antiferroelectric hafnium–zirconium oxide thin films

Stabilization of Ferroelectric Hf0.5Zr0.5O2 Epitaxial Films via Monolayer Reconstruction Driven by Interfacial Redox Reaction

Mechanical-electrical-chemical coupling study on the stabilization of a hafnia-based ferroelectric phase

Ferroelectric Hf0.5Zr0.5O2 Thin Films Deposited Epitaxially on (110)-Oriented SrTiO3

Stabilization of Competing Ferroelectric Phases of HfO 2 under Epitaxial Strain

Ferroelectricity of pristine Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films fabricated by atomic layer deposition

Enhancement of Ferroelectricity and Homogeneity of Orthorhombic Phase in Hf0.5Zr0.5O2 Thin Films

Complexities in the growth and stabilization of polar phase in the Hf$_{0.5}$Zr$_{0.5}$O$_2$ thin films grown by Pulsed Laser Deposition

Ferroelectricity in Hafnia: The Origin of Nanoscale Stabilization

Epitaxial Hf0.5Zr0.5O2 Films: A Temperature Dependence Study

Epitaxial Orientation-Controlled High Crystallinity and Ferroelectric Properties in Hf0.5Zr0.5O2 Films

Enhancement of ferroelectricity and homogeneity of orthorhombic phase in Hf 0.5 Zr 0.5 O 2 thin films

Electrochemical control of ferroelectricity in hafnia-based ferroelectric devices using reversible oxygen migration

Thickness-Dependent Ferroelectricity in Freestanding Hf 0.5 Zr 0.5 O 2 Membranes

A Stable Rhombohedral Phase in Ferroelectric Hf(Zr)1+xO2 Capacitor with Ultralow Coercive Field.

Stabilization of thick, rhombohedral Hf 0.5 Zr 0.5 O 2 epilayer on c-plane ZnO