Abstract:Through comparison between the microstructures, crystallization temperatures, and biaxial stresses of hafnium zirconium oxide thin films processed with and without top TaN electrode layers, the origin of the clamping effect in HfO2‐based ferroelectrics is investigated. It is shown that local inhibition in out‐of‐plane expansion during crystallization stabilizes the ferroelectric orthorhombic phase, which drives an increase in film tensile biaxial stress. The presence of the top electrode on hafnium oxide‐based thin films during processing has been shown to drive an increase in the amount of metastable ferroelectric orthorhombic phase and polarization performance. This "Clamping Effect," also referred to as the Capping or Confinement Effect, is attributed to the mechanical stress and confinement from the top electrode layer. However, other contributions to orthorhombic phase stabilization have been experimentally reported, which may also be affected by the presence of a top electrode. In this study, it is shown that the presence of the top electrode during thermal processing results in larger tensile biaxial stress magnitudes and concomitant increases in ferroelectric phase fraction and polarization response, whereas film chemistry, microstructure, and crystallization temperature are not affected. Through etching experiments and measurement of stress evolution for each processing step, it is shown that the top electrode locally inhibits out‐of‐plane expansion in the HZO during crystallization, which prevents equilibrium monoclinic phase formation and stabilizes the orthorhombic phase. This study provides a mechanistic understanding of the clamping effect and orthorhombic phase formation in ferroelectric hafnium oxide‐based thin films, which informs the future design of these materials to maximize ferroelectric phase purity and corresponding polarization behavior.

Stability of ferroelectric and antiferroelectric hafnium–zirconium oxide thin films

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Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of HfO2

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of Hf O 2

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Tensile Stress Regulated Microstructures and Ferroelectric Properties of Hf0.5Zr0.5O2 Films

Epitaxial Hf0.5Zr0.5O2 Films: A Temperature Dependence Study

Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films

Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films

Complexities in the growth and stabilization of polar phase in the Hf$_{0.5}$Zr$_{0.5}$O$_2$ thin films grown by Pulsed Laser Deposition

Stabilization of the epitaxial rhombohedral ferroelectric phase in ZrO2 by surface energy

Thickness-Dependent Ferroelectricity in Freestanding Hf 0.5 Zr 0.5 O 2 Membranes

Interfacial Regulation of Dielectric Properties in Ferroelectric Hf0.5Zr0.5O2 Thin Films

Epitaxial Orientation-Controlled High Crystallinity and Ferroelectric Properties in Hf0.5Zr0.5O2 Films

Ferroelectricity in Hafnia: The Origin of Nanoscale Stabilization

Stabilization of Competing Ferroelectric Phases of HfO 2 under Epitaxial Strain

Ferroelectric Hf0.5Zr0.5O2 Thin Films Deposited Epitaxially on (110)-Oriented SrTiO3