Abstract:The discovery of ferroelectricity in hafnia-based materials have boosted the potential of incorporating ferroelectrics in advanced electronics, thanks to their compatibility with silicon technology. However, comprehending why these materials defy the common trend of reduced ferroelectric ordering at the nanoscale, and the mechanism that stabilizes the ferroelectric phase (absent in hafnia phase diagram) presents significant challenges to traditional knowledge of ferroelectricity. In this work, we show that the formation of the orthorhombic ferroelectric phase (o-FE, space group Pca21) of the single-crystalline epitaxial films of 10% La-doped HfO2 (LHO) on (111)-oriented yttria stabilized zirconia (YSZ) relies on the stability of the high-pressure orthorhombic antiferroelectric phase (o-AFE, space group Pbca). Our detailed structural characterizations demonstrate that as-grown LHO films represent largely the o-AFE phase being thermodynamically stabilized by the compressive strain. Our Kelvin probe force microscopy studies show, under mechanical poling, the o-AFE phase is converted to the o-FE phase which remains stable under ambient conditions. We find that the orthorhombic phase stability is enhanced in thinner films down to one-unit-cell thickness, a trend that is unknown in any other ferroelectric films. This is due to the vanishing depolarization field of the o-AFE phase and the isomorphic LHO/YSZ interface, supporting strain-enhanced ferroelectricity in the ultrathin films. This results in an unprecedented increase of the Curie temperature up to 850 °C, the highest reported for sub-nanometer-thick ferroelectrics. Overall, our findings opens the way for advanced engineering of hafnia-based materials for ferroelectric applications and heralding a new frontier of high-temperature ferroelectrics at the two-dimensional limit.

Stabilization of Competing Ferroelectric Phases of HfO 2 under Epitaxial Strain

Effects of Growth Orientations and Epitaxial Strains on Phase Stability of HfO$_2$ Thin Films

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Structural and Ferroelectric Transition in Few-Layer HfO2 Films by First Principles Calculations

Distinguishing the Rhombohedral Phase from Orthorhombic Phases in Epitaxial Doped HfO2 Ferroelectric Films

Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films

Disentangling stress and strain effects in ferroelectric HfO2

Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress

Epitaxial ferroelectric hafnia stabilized by symmetry constraints

Ferroelectricity in Hafnia: The Origin of Nanoscale Stabilization

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of Hf O 2

Ferroelectric structural transition in hafnium oxide induced by charged oxygen vacancies

Stabilization of Ferroelectric Hf0.5Zr0.5O2 Epitaxial Films via Monolayer Reconstruction Driven by Interfacial Redox Reaction

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of HfO2

Phase transitions in HfO2 probed by first-principles computations

Interface control of tetragonal ferroelectric phase in ultrathin Si-doped HfO2 epitaxial films

Progress in Computational Understanding of Ferroelectric Mechanisms in HfO$_2$

Kinetical phase transition paths and phase stability in ferroelectric HfO 2

Flexoelectricity-stabilized ferroelectric phase with enhanced reliability in ultrathin La:HfO2 films