Abstract:The discovery of ferroelectricity in both pure and doped HfO$_2$-based thin films have revitalized the interest in using ferroelectrics for nanoscale device applications. To take advantage of this silicon-compatible ferroelectric, fundamental questions such as the origin of ferroelectricity and better approach to controlled realization of ferroelectricity at the nanoscale need to be addressed. The emergence of robust polarization in HfO$_2$-based thin films is considered as the cumulative effect of various extrinsic factors such as finite-size effects and surface/interface effects of small grains, compressive stress, dopants, oxygen vacancies, and electric fields. The kinetic effects of phase transitions and their potential impacts on the emergence of ferroelectricity in HfO$_2$ at the nanoscale are not well understood. In this work, we construct the transition paths between different polymorphs of hafnia with density functional theory calculations and variable-cell nudged elastic band technique. We find that the transition barriers depend strongly on the mechanical boundary conditions and the transition from the tetragonal phase to the polar orthorhombic phase is a fast process kinetically under clamping. The effects of growth orientations and epitaxial strains on the relative stability of different phases of HfO$_2$ are investigated. The two orthorhombic phases, polar $Pca2_1$ and non-polar $Pbca$, become thermodynamically stable in (111)-oriented thin films over a wide range of epitaxial strain conditions. This work suggests a potential avenue to better stabilize the ferroelectric phase in HfO$_2$ thin films through substrate orientation engineering.

Kinetical phase transition paths and phase stability in ferroelectric HfO 2

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Phase Stability and Phase Transition Pathways in the Rhombohedral Phase of HfO2

Phase transitions in HfO2 probed by first-principles computations

Stabilization of Competing Ferroelectric Phases of HfO 2 under Epitaxial Strain

Structural and Ferroelectric Transition in Few-Layer HfO2 Films by First Principles Calculations

In-situ Atomic-Level Observation of Reversible First-Order Transition in Hf0.5 Zr0.5 O₂ Ferroelectric Film

Phase Competition in HfO$_2$ with Applied Electric Field from First Principles

Insights into the Ferroelectric Orthorhombic Phase Formation in Doped HfO2 Thin Films

Ferroelectric structural transition in hafnium oxide induced by charged oxygen vacancies

Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y

Kinetically-stabilized Ferroelectricity in Bulk Singlecrystalline HfO2:Y without Wake-up Effects

Optimal Parameter-Space for Stabilizing the Ferroelectric Phase of Hf0.5Zr0.5O2 Thin-Films under Strain and Electric Fields

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of HfO2

Progress in Computational Understanding of Ferroelectric Mechanisms in HfO$_2$

Progress in computational understanding of ferroelectric mechanisms in HfO 2

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of Hf O 2

Effects of Growth Orientations and Epitaxial Strains on Phase Stability of HfO$_2$ Thin Films

The structural stability and polarization analysis of rhombohedral phase HfO2