Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y

Xianghan Xu,Fei-Ting Huang,Yubo Qi,Sobhit Singh,Karin M. Rabe,Dimuthu Obeysekera,Junjie Yang,Ming-Wen Chu,Sang-Wook Cheong
DOI: https://doi.org/10.1038/s41563-020-00897-x
IF: 41.2
2021-01-25
Nature Materials
Abstract:HfO<sub>2</sub>, a simple binary oxide, exhibits ultra-scalable ferroelectricity integrable into silicon technology. This material has a polymorphic nature, with the polar orthorhombic (<i>Pbc</i>2<sub>1</sub>) form in ultrathin films regarded as the plausible cause of ferroelectricity but thought not to be attainable in bulk crystals. Here, using a state-of-the-art laser-diode-heated floating zone technique, we report the <i>Pbc</i>2<sub>1</sub> phase and ferroelectricity in bulk single-crystalline HfO<sub>2</sub>:Y as well as the presence of the antipolar <i>Pbca</i> phase at different Y concentrations. Neutron diffraction and atomic imaging demonstrate (anti)polar crystallographic signatures and abundant 90°/180° ferroelectric domains in addition to switchable polarization with negligible wake-up effects. Density-functional-theory calculations indicate that the yttrium doping and rapid cooling are the key factors for stabilization of the desired phase in bulk. Our observations provide insights into the polymorphic nature and phase control of HfO<sub>2</sub>, remove the upper size limit for ferroelectricity and suggest directions towards next-generation ferroelectric devices.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter
What problem does this paper attempt to address?
### What problems does this paper attempt to solve? This paper aims to solve the problem of achieving ferroelectricity in bulk single crystals of hafnium - based oxides (HfO₂). Specifically, the authors attempt to answer the following key questions: 1. **How can ferroelectricity be achieved in bulk hafnium - based oxides?** - By using the advanced laser diode heating floating zone (LDFZ) technique, the paper successfully stabilizes the metastable orthorhombic ferroelectric phase (o - FE) in bulk hafnium - based yttrium oxide (HfO₂:Y) single crystals and observes ferroelectricity at room temperature and normal pressure. 2. **Can ferroelectricity be maintained in large - size samples?** - The researchers find that ferroelectricity can be stabilized in bulk single crystals and this ferroelectricity is accompanied by a small wake - up effect. This breaks the previous view that ferroelectricity is limited to ultra - thin films and provides new possibilities for future ferroelectric material applications. 3. **What are the effects of different doping concentrations on the phase structure and ferroelectricity?** - By changing the doping concentration of yttrium (Y), the researchers are able to stabilize different phase structures, such as the antipolar orthorhombic phase (o - AP). They find that a yttrium doping concentration of 8 - 12% can significantly affect the phase structure and help stabilize the ferroelectric phase. 4. **Why can hafnium - based oxides exhibit ferroelectricity in the bulk?** - Through density functional theory (DFT) calculations, the authors reveal that rapid cooling and yttrium supersaturation are the key factors in stabilizing the ferroelectric phase. These factors make the transition from the high - temperature tetragonal phase (t) to the low - temperature orthorhombic ferroelectric phase (o - FE) have the minimum energy barrier, which is conducive to the formation of the ferroelectric phase. 5. **What is the microscopic mechanism of ferroelectricity?** - Using techniques such as high - angle annular dark - field scanning transmission electron microscopy (HAADF - STEM), selected - area electron diffraction (SAED) and neutron powder diffraction (NPD), the researchers have characterized in detail the existence of ferroelectric domains and their structural characteristics, further understanding the microscopic mechanism of ferroelectricity. In summary, this paper solves the difficult problem of achieving ferroelectricity in bulk single crystals of hafnium - based oxides, providing an important scientific basis and technical path for the future development of next - generation non - volatile memories and other ferroelectric devices based on hafnium - based materials.