Abstract:The ability to develop ferroelectric materials using binary oxides is critical to enable novel low-power, high-density non-volatile memory and fast switching logic. The discovery of ferroelectricity in hafnia-based thin films, has focused the hopes of the community on this class of materials to overcome the existing problems of perovskite-based integrated ferroelectrics. However, both the control of ferroelectricity in doped-HfO2 and the direct characterization at the nanoscale of ferroelectric phenomena, are increasingly difficult to achieve. The main limitations are imposed by the inherent intertwining of ferroelectric and dielectric properties, the role of strain, interfaces and electric field-mediated phase, and polarization changes. In this work, using Si-doped HfO2 as a material system, we performed a correlative study with four scanning probe techniques for the local sensing of intrinsic ferroelectricity on the oxide surface. Putting each technique in perspective, we demonstrated that different origins of spatially resolved contrast can be obtained, thus highlighting possible crosstalk not originated by a genuine ferroelectric response. By leveraging the strength of each method, we showed how intrinsic processes in ultrathin dielectrics, i.e., electronic leakage, existence and generation of energy states, charge trapping (de-trapping) phenomena, and electrochemical effects, can influence the sensed response. We then proceeded to initiate hysteresis loops by means of tip-induced spectroscopic cycling (i.e., “wake-up”), thus observing the onset of oxide degradation processes associated with this step. Finally, direct piezoelectric effects were studied using the high pressure resulting from the probe’s confinement, noticing the absence of a net time-invariant piezo-generated charge. Our results are critical in providing a general framework of interpretation for multiple nanoscale processes impacting ferroelectricity in doped-hafnia and strategies for sensing it.

Progress in computational understanding of ferroelectric mechanisms in HfO 2

Progress in Computational Understanding of Ferroelectric Mechanisms in HfO$_2$

Ferroelectricity of hafnium oxide-based materials: Current status and future prospects from physical mechanisms to device applications

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Ferroelectricity in Hafnia: The Origin of Nanoscale Stabilization

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Ferroelectric domain nucleation and switching pathways in hafnium oxide

Deep learning of accurate force field of ferroelectric

Stabilization of Competing Ferroelectric Phases of HfO 2 under Epitaxial Strain

Deep Learning of Accurate Force Field of Ferroelectric HfO2

Ferroelectricity in hafnia controlled via surface electrochemical state

Ultrahigh Oxygen Ion Mobility in Ferroelectric Hafnia

Impact of Four-Valent Doping on the Crystallographic Phase Formation for Ferroelectric HfO$_2$ from First-Principles: Implications for Ferroelectric Memory and Energy-Related Applications

Ferroelectricity in Si-Doped Hafnia: Probing Challenges in Absence of Screening Charges

Phase transitions in HfO2 probed by first-principles computations

Structural and Ferroelectric Transition in Few-Layer HfO2 Films by First Principles Calculations

Deep Learning of Accurate Force Field of Ferroelectric HfO$_2$

Kinetically-stabilized Ferroelectricity in Bulk Singlecrystalline HfO2:Y without Wake-up Effects

Insights into the Origin of Robust Ferroelectricity in HfO2 -Based Thin Films from the Order-Disorder Transition Driven by Vacancies

Ferroelectric structural transition in hafnium oxide induced by charged oxygen vacancies