Abstract:The discovery of ferroelectricity in the fluorite-structure HfO2 has attracted much interest in various applications including electro-optic devices and nonvolatile memories. Doping and alloying not only induce the ferroelectricity in HfO2, but also significantly impact the thermal conduction which plays an essential role in the heat dissipation and thermal stability of ferroelectric devices. To understand and regulate the heat transfer in ferroelectric HfO2, it is crucial to investigate the thermal conduction properties of related fluorite-structure ferroelectrics so as to establish the structure-property relation. In this work, using first-principles calculations, we investigate the thermal transport in twelve fluorite-structure ferroelectrics. We find an overall satisfactory agreement between the calculated thermal conductivities and those predicted by the simple theory of Slack. Among the family of fluorite-structure ferroelectrics, the transition-metal oxides HfO2 and ZrO2 have the highest thermal conductivities due to the strong interatomic bonding. We demonstrate that the spontaneous polarization, a feature specific to ferroelectrics, is positively correlated with the thermal conductivity, namely, the larger the spontaneous polarization, the larger the thermal conductivity. This is of chemical origin, namely both the spontaneous polarization and the thermal conductivity are positively correlated to the "ionicity" of the ferroelectrics. We further find that the thermal conductivity is several times lower in ferroelectric solid solution Hf1-xZrxO2 than its pure counterparts, especially in the thin films where the finite size effect further suppresses thermal conduction. Our findings suggest the spontaneous polarization as a specific criterion for identifying ferroelectrics with desired thermal conductivities, which may promote the designs and applications of ferroelectrics.

Insights into the Origin of Robust Ferroelectricity in HfO2 -Based Thin Films from the Order-Disorder Transition Driven by Vacancies

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

First Principle Study on Oxygen Vacancy Induced Ferroelectricity in HFO2-Based Ferroelectrics

Ferroelectric structural transition in hafnium oxide induced by charged oxygen vacancies

Charged Oxygen Vacancy Induced Ferroelectric Structure Transition in Hafnium Oxide

Extrinsic ferroelectricity originated from oxygen vacancy drift in HfO2-based films

Progress in Computational Understanding of Ferroelectric Mechanisms in HfO$_2$

Possible Extrinsic Ferroelectric-like Signals Originated from the Oxygen Vacancy Drift in HfO 2 -Based Films

Structural and Ferroelectric Transition in Few-Layer HfO2 Films by First Principles Calculations

Progress in computational understanding of ferroelectric mechanisms in HfO 2

Kinetically-stabilized Ferroelectricity in Bulk Singlecrystalline HfO2:Y without Wake-up Effects

Ferroelectricity in HfO 2 from a Coordination Number Perspective

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

A General Physics Model of Oxygen Vacancy Dynamics for Ferroelectricity Enhancement and Degradation in Hafnia-Based Thin Films

Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y

Precise structure and polarization determination of Hf0.5Zr0.5O2 with electron ptychography

Kinetical phase transition paths and phase stability in ferroelectric HfO 2

Intrinsic Defect Limit To The Growth Of Orthorhombic Hfo2 And (Hf,Zr)O-2 With Strong Ferroelectricity: First-Principles Insights

First-principles study of thermal transport properties in ferroelectric HfO2 and related fluorite-structure ferroelectrics

Impact of Oxygen Vacancy on Ferroelectric Characteristics and Its Implication for Wake-Up and Fatigue of HfO2-Based Thin Films

Stabilization of Competing Ferroelectric Phases of HfO 2 under Epitaxial Strain