Abstract:Hf0.5Zr0.5O2 (HZO) is a promising candidate for next generation ferroelectric memories and transistors. However, its ferroelectricity origin is still under debate due to the complex of its phase and microstructure in practical samples. In this study, we investigate the atomic structure of substrate-free HZO freestanding film with multislice electron ptychography, for which the ultra-high space resolution (up to ~25 pm) and capability to simultaneously image the cation and oxygen allow us to precisely determine the intrinsic atomic structures of different phases and reveal subtle changes among them. We clarify that the orthorhombic phase is ferroelectric with spontaneous polarization ~34{\pm}4 {\mu}C/cm2 (corresponding to 56{\pm}6 pm in displacement) that is accurately measured through statistical analysis. Significant polarization suppression is observed near the grain boundary, while no distinguishable structural changes are detected near the 180° ferroelectric domain walls. Through the direct oxygen imaging of orthorhombic phase from the [111] zone axis, we quantify a substantial number of oxygen vacancies with a preferential distribution, which influences the polarization direction and strength. These findings provide fundamentals for HZO research, and thus lay a foundation for the design of high-performance ferroelectric devices.

What problem does this paper attempt to address?

The problems that this paper attempts to solve are related to the origin of ferroelectricity in hafnium - zirconium oxide (Hf0.5Zr0.5O2, abbreviated as HZO) and the accurate characterization of its microstructure. Specifically: 1. **Controversy over the origin of ferroelectricity**: Although HZO has broad application prospects in next - generation ferroelectric memories and transistors, the origin of its ferroelectricity remains controversial. The main points of controversy lie in the influence of different phase structures (such as the orthorhombic phase, rhombohedral phase, etc.) on ferroelectricity, as well as the role of oxygen vacancies (VO) in ferroelectric properties. 2. **Influence of complex phase structures and microstructures**: HZO in actual samples has complex phase structures and microstructures, which make it difficult to determine the intrinsic mechanism of its ferroelectricity. For example, the orthorhombic phase is considered to be one of the sources of ferroelectricity, but this phase is metastable at room temperature and normal pressure, and HZO has multiple phase structures, which increases the complexity of the research. 3. **Limitations of high - resolution imaging techniques**: Traditional imaging techniques (such as X - ray diffraction, scanning transmission electron microscopy - STEM, etc.) cannot provide sufficient spatial resolution to accurately characterize structural changes at the atomic scale, especially the position and distribution of oxygen atoms. In addition, these techniques are easily affected by factors such as sample tilt, thickness variation, and residual aberration, resulting in deviations in experimental results. To solve these problems, this paper adopts the multislice electron ptychography (MEP) technique to achieve imaging with ultra - high spatial resolution (about 25 picometers), so that it can image the positions of cations and oxygen atoms simultaneously and reveal the subtle changes between different phases. Through this method, researchers can more accurately analyze the intrinsic atomic structure of HZO, especially the ferroelectricity of the orthorhombic phase and the distribution of oxygen vacancies, providing important basic data for understanding and optimizing HZO - based ferroelectric devices. ### Main findings: - It was confirmed that the orthorhombic phase (space group Pca2_1) is the ferroelectric phase of HZO, and its spontaneous polarization intensity was measured to be approximately 34 ± 4 μC/cm² (corresponding displacement is 56 ± 6 pm). - It was found that there is a significant polarization suppression phenomenon near the grain boundaries, while no obvious structural changes were observed at the 180° domain walls. - By directly imaging oxygen atoms along the [111] direction, the preferential distribution of oxygen vacancies was discovered, which has an important influence on the polarization direction and intensity. These findings provide important theoretical and experimental bases for understanding the ferroelectricity of HZO and optimizing its performance.

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