Abstract:The discovery of ferroelectricity in HfO2 based materials reactivated the research on ferroelectric memory. However, the complete mechanism underlying its ferroelectricity remains to be fully elucidated. In this study, we conducted a systematic study on the microstructures and ferroelectric properties of Hf0.5Zr0.5O2 (HZO) thin films with various annealing rates in the rapid thermal annealing. It was observed that the HZO thin films with higher annealing rates demonstrate smaller grain size, reduced surface roughness and a higher portion of orthorhombic phase. Moreover, these films exhibited enhanced polarization values and better fatigue cycles compared to those treated with lower annealing rates. The grazing incidence x-ray diffraction measurements revealed the existence of tension stress in the HZO thin films, which was weakened with decreasing annealing rate. Our findings revealed that this internal stress, along with the stress originating from the top/bottom electrode, plays a crucial role in modulating the microstructure and ferroelectric properties of the HZO thin films. By carefully controlling the annealing rate, we could effectively regulate the tension stress within HZO thin films, thus achieving precise control over their ferroelectric properties. This work established a valuable pathway for tailoring the performance of HZO thin films for various applications.

In-situ Atomic-Level Observation of Reversible First-Order Transition in Hf0.5 Zr0.5 O₂ Ferroelectric Film

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

In-situ Atomic Visualization of Structural Transformation in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film: from Nonpolar Tetragonal Phase to Polar Orthorhombic Phase

Atomic Visualization of the Emergence of Orthorhombic Phase in Hf0.5Zr0.5O2 Ferroelectric Film with In-Situ Rapid Thermal Annealing

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Observing Ferroelastic Switching in Hf0.5Zr0.5O2 Thin Film

Observing Ferroelastic switching in Hf 0.5 Zr 0.5 O 2 Thin Film

Direct Atomic-Scale Visualization of the 90° Domain Walls and Their Migrations in Hf0.5Zr0.5O2 Ferroelectric Thin Films

Precise structure and polarization determination of Hf0.5Zr0.5O2 with electron ptychography

Tensile stress regulated microstructures and ferroelectric properties of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films

Epitaxial Hf0.5Zr0.5O2 Films: A Temperature Dependence Study

Ferroelectricity of pristine Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films fabricated by atomic layer deposition

Enhancement of Ferroelectricity and Homogeneity of Orthorhombic Phase in Hf0.5Zr0.5O2 Thin Films

Kinetical phase transition paths and phase stability in ferroelectric HfO 2

Kinetical Phase Transition Paths and Phase Stability in Ferroelectric HfO2

Enhancement of ferroelectricity and homogeneity of orthorhombic phase in Hf 0.5 Zr 0.5 O 2 thin films

Innovative Ultralow Thermal Budget ZrHfOx Ferroelectric Films with Low-Temperature Phase Transition for Next-Generation High-Speed Multifunctional Devices

Ferroelectricity in $\mathrm{hfo_2}$ from a Chemical Perspective

Atomic-scale Characterization of Defects Generation During Fatigue in Ferroelectric Hf0.5Zr0.5O2 Films: Vacancy Generation and Lattice Dislocation