Abstract:Abstract Ferroelectric hafnia-based thin films have attracted intense attention due to their compatibility with complementary metal-oxide-semiconductor technology. However, the ferroelectric orthorhombic phase is thermodynamically metastable. Various efforts have been made to stabilize the ferroelectric orthorhombic phase of hafnia-based films such as controlling the growth kinetics and mechanical confinement. Here, we demonstrate a key interface engineering strategy to stabilize and enhance the ferroelectric orthorhombic phase of the Hf 0.5 Zr 0.5 O 2 thin film by deliberately controlling the termination of the bottom La 0.67 Sr 0.33 MnO 3 layer. We find that the Hf 0.5 Zr 0.5 O 2 films on the MnO 2 -terminated La 0.67 Sr 0.33 MnO 3 have more ferroelectric orthorhombic phase than those on the LaSrO-terminated La 0.67 Sr 0.33 MnO 3 , while with no wake-up effect. Even though the Hf 0.5 Zr 0.5 O 2 thickness is as thin as 1.5 nm, the clear ferroelectric orthorhombic (111) orientation is observed on the MnO 2 termination. Our transmission electron microscopy characterization and theoretical modelling reveal that reconstruction at the Hf 0.5 Zr 0.5 O 2 / La 0.67 Sr 0.33 MnO 3 interface and hole doping of the Hf 0.5 Zr 0.5 O 2 layer resulting from the MnO 2 interface termination are responsible for the stabilization of the metastable ferroelectric phase of Hf 0.5 Zr 0.5 O 2 . We anticipate that these results will inspire further studies of interface-engineered hafnia-based systems.

In-situ atomic-level observation of reversible first-order transition in Hf<inf>0.5</inf> Zr<inf>0.5</inf> O₂ ferroelectric film

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Observing Ferroelastic switching in Hf 0.5 Zr 0.5 O 2 Thin Film

Ferroelectricity of pristine Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films fabricated by atomic layer deposition

Tensile Stress Regulated Microstructures and Ferroelectric Properties of Hf0.5Zr0.5O2 Films

Epitaxial Hf0.5Zr0.5O2 Films: A Temperature Dependence Study

Kinetical phase transition paths and phase stability in ferroelectric HfO 2

Direct Atomic-Scale Visualization of the 90° Domain Walls and Their Migrations in Hf0.5Zr0.5O2 Ferroelectric Thin Films

Enhancement of Ferroelectricity and Homogeneity of Orthorhombic Phase in Hf0.5Zr0.5O2 Thin Films

Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films

Enhancement of ferroelectricity and homogeneity of orthorhombic phase in Hf 0.5 Zr 0.5 O 2 thin films

Controlling the Ferroelectricity of Doped-HfO2 Via Reversible Migration of Oxygen Vacancy

Phase transitions in HfO2 probed by first-principles computations

Epitaxial Orientation-Controlled High Crystallinity and Ferroelectric Properties in Hf0.5Zr0.5O2 Films

Precise structure and polarization determination of Hf0.5Zr0.5O2 with electron ptychography

Structural and Ferroelectric Transition in Few-Layer HfO2 Films by First Principles Calculations

Visualizing Ferroelectric Uniformity of Hf1- xZr x O2 Films Using X-ray Mapping

Ferroelectricity in HfO 2 from a Coordination Number Perspective

Ferroelectric and dielectric properties of Hf0.5Zr0.5O2 thin film near morphotropic phase boundary