Abstract:In the recent years, ferroelectricity in Hf0.5Zr0.5O2 (HZO) has been intensively studied due to its compatibility with silicon-based ferroelectric applications, high dielectric constant, and maintenance of robust ferroelectricity even at ultrathin thickness (<10 nm). This makes it a potential alternative material in ferroelectric field-effect transistors, complementary metal-oxide-semiconductor (CMOS) gate layers, and other applications. Previous studies have explained that ferroelectricity is attributed to the transformation from a tetragonal (t-phase) to orthorhombic (o-phase) structure during cooling. Conventional HZO thin films that are directly grown on silicon are polycrystalline, which reduces the polarization efficiency in CMOS devices. To address this problem, there is a demand for epitaxial freestanding HZO (FS-HZO) thin films that can be transferred without substrate constraints. In this study, we conducted comprehensive analysis of FS-HZO membranes with varying thicknesses to investigate the relationship between ferroelectric properties and thin film thickness. With monoclinic phase (m-phase) substitution, we notice a reduced o-phase fraction and gradual suppression of ferroelectricity when the thickness is over 20 nm. Owing to the large structure anisotropy, we further observed an increase in X-ray linear dichroism with increasing thickness. In addition, the dielectric constant of FS-HZO decreases by half compared to as-grown HZO due to increased leakage current from the cracks led by the freestanding process. This study presents an important method to combine oxides with silicon-based semiconductors and detailed information on various thicknesses of FS-HZO in aspects of structure and ferroelectricity, providing a potential solution to compatibility concerns in the context of next-generation nanoelectronics.

Epitaxial Hf0.5Zr0.5O2 Films: A Temperature Dependence Study

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Epitaxial Orientation-Controlled High Crystallinity and Ferroelectric Properties in Hf0.5Zr0.5O2 Films

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Ferroelectricity of pristine Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films fabricated by atomic layer deposition

Tensile stress regulated microstructures and ferroelectric properties of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films

Epitaxial ferroelectric Hf0.5Zr0.5O2 thin film on a buffered YSZ substrate through interface reaction

Stable Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Within a Broad Working Temperature Range

Epitaxial Orientation-Controlled High Crystallinity and Ferroelectric Properties in Hf 0.5 Zr 0.5 O 2 Films

Ferroelectric Hf0.5Zr0.5O2 Thin Films Deposited Epitaxially on (110)-Oriented SrTiO3

Effects of Thickness and Anisotropic Strain on Polarization Switching Properties of Sub-10 Nm Epitaxial Hf0.5Zr0.5O2 Thin Films

Effects of thickness and anisotropic strain on polarization switching properties of sub-10 nm epitaxial Hf 0.5 Zr 0.5 O 2 thin films

Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films

Texture in atomic layer deposited Hf0.5Zr0.5O2 ferroelectric thin films

Anomalous polarization-switching phenomena and noteworthy pyroelectricity in ferroelectric Hf0.5Zr0.5O2 polycrystalline films

Interfacial Regulation of Dielectric Properties in Ferroelectric Hf0.5Zr0.5O2 Thin Films

Thickness-Dependent Ferroelectricity in Freestanding Hf 0.5 Zr 0.5 O 2 Membranes

Atomic Layer Deposition of Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films

Precise structure and polarization determination of Hf0.5Zr0.5O2 with electron ptychography

Interlayer-engineered local epitaxial templating induced enhancement in polarization (2P$_r$ > 70$μ$C/cm$^2$) in Hf$_{0.5}$Zr$_{0.5}$O$_2$ thin films