Abstract:After the discovery of ferroelectricity in HfO$_2$ based thin films a decade ago, ferroelectric Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) thin films are frequently being utilized in the CMOS (Complementary Metal- Oxide Semiconductor) and logic devices, thanks to their large remnant polarization, high retention and endurance. A great deal of effort has been made towards understanding the origin of ferroelectricity in epitaxial HZO thin films and controlling the microstructure at the atomic level which governs the ferroelectric phase. Nevertheless, the HZO films still suffer from fundamental questions, such as (1) the vagueness of interfacial mechanisms between HZO, buffer layer and the substrate which controls the polar phase; (2) the nature of the metastable polar phase responsible for the ferroelectricity, be it orthorhombic or rhombohedral; which are poorly understood. Here, we have addressed these issues by employing the in-situ reflection high energy electron diffraction -- assisted pulsed laser deposition and mapping the asymmetrical polar maps on high quality HZO films grown on functional perovskite oxide substrates. The interface between La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO) and the substrate is shown to be quite important, and a slightly rougher interface of the former destabilizes the ferroelectric phase of HZO irrespective of well-controlled growth of the ferroelectric layers. A rhombohedral-like symmetry of HZO unit cell is extracted through the x-ray diffraction asymmetrical polar maps. The ferroelectric measurements on a nearly 7 nm HZO film on STO(001) substrate display a remnant polarization close to 8 uC/cm$^2$. These results highlight the complexities involved at the atomic scale interface in the binary oxides thin films and can be of importance to the HfO$_2$-based ferroelectric community which is still at its infancy.

Texture in atomic layer deposited Hf0.5Zr0.5O2 ferroelectric thin films

Epitaxial Orientation-Controlled High Crystallinity and Ferroelectric Properties in Hf0.5Zr0.5O2 Films

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Epitaxial Hf0.5Zr0.5O2 Films: A Temperature Dependence Study

Ferroelectric Hf0.5Zr0.5O2 Thin Films Deposited Epitaxially on (110)-Oriented SrTiO3

Thickness-Dependent Ferroelectricity in Freestanding Hf 0.5 Zr 0.5 O 2 Membranes

Epitaxial Orientation-Controlled High Crystallinity and Ferroelectric Properties in Hf 0.5 Zr 0.5 O 2 Films

Atomic Layer Deposition of Epitaxial Ferroelectric Hf0.5Zr0.5O2 Thin Films

Ferroelectricity of pristine Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films fabricated by atomic layer deposition

Excellent Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Induced by Al2O3 Dielectric Layer

Precise structure and polarization determination of Hf0.5Zr0.5O2 with electron ptychography

Enhancement of Ferroelectricity and Homogeneity of Orthorhombic Phase in Hf0.5Zr0.5O2 Thin Films

Tensile stress regulated microstructures and ferroelectric properties of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films

Effects of thickness and anisotropic strain on polarization switching properties of sub-10 nm epitaxial Hf 0.5 Zr 0.5 O 2 thin films

Enhancement of ferroelectricity and homogeneity of orthorhombic phase in Hf 0.5 Zr 0.5 O 2 thin films

Interlayer-engineered local epitaxial templating induced enhancement in polarization (2P$_r$ > 70$μ$C/cm$^2$) in Hf$_{0.5}$Zr$_{0.5}$O$_2$ thin films

Effects of Thickness and Anisotropic Strain on Polarization Switching Properties of Sub-10 Nm Epitaxial Hf0.5Zr0.5O2 Thin Films

Improved ferroelectric properties of CMOS back-end-of-line compatible Hf0.5Zr0.5O2 thin films by introducing dielectric layers

Complexities in the growth and stabilization of polar phase in the Hf$_{0.5}$Zr$_{0.5}$O$_2$ thin films grown by Pulsed Laser Deposition

Epitaxial ferroelectric Hf0.5Zr0.5O2 thin film on a buffered YSZ substrate through interface reaction