Abstract:Recently, based on the phase-field modeling, it was predicted that Hf1-xZrxO2 (HZO) exhibits the morphotropic phase boundary (MPB) in its compositional phase diagram. Here, we investigate the effect of structural changes between tetragonal (t) and orthorhombic (o) phases on the ferroelectric and dielectric properties of HZO films to probe the existence of MPB region. The structural analysis show that by adjusting the ozone dosage during the atomic layer deposition process and annealing conditions, different ratios of t- to o-phases (f_(t/o) ) were achieved which consequently affect the ferroelectric and dielectric properties of the samples. Polarization versus electric field measurements show a remarkable increase in ferroelectric characteristics (Pr and Ec) of the sample that contains the minimum t-phase fraction (f_(t/o)~ 0.04). This sample shows the lowest dielectric constant compared to the other samples which is due to the formation of ferroelectric o-phase. The sample that contains the maximum f_(t/o)~ 0.41 demonstrates the highest dielectric response. By adjusting the f_(t/o), a large dielectric constant of ~ 55 is achieved. Our study reveals a direct relation between f_(t/o) and dielectric constant of HZO thin films which can be understood by considering the density of MPB region.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to verify whether there is a morphotropic phase boundary (MPB) in Hf0.5Zr0.5O2 (HZO) thin films. Specifically, the research adjusts the ratio of the tetragonal (t - phase) to the orthorhombic (o - phase) in HZO thin films (denoted as \( f_{t/o} \)), to explore the influence of these structural changes on the ferroelectric and dielectric properties of HZO thin films, thereby proving the existence of the MPB region.
### Research Background
1. **Application Prospects of Ferroelectric Materials**: Since the discovery of ferroelectric properties in HfO2 - based materials, due to their simple structure, strong binding energy between oxygen and transition metal ions, large band gap (about 5.3 - 5.7 eV), and compatibility with current complementary metal - oxide - semiconductor technology, the application potential of ferroelectric materials in fields such as ferroelectric memories, ferroelectric field - effect transistors (Fe - FETs), pyroelectric sensors, and energy harvesters has attracted extensive research interest.
2. **Importance of the MPB Phenomenon**: In ferroelectric materials, the transition between different structural phases is usually caused by compositional changes, and this transition forms a boundary called MPB in the phase diagram. Near the MPB, since different phases are almost in an energy - degenerate state, the response of the material to an external electric field is mainly manifested as a change in the polarization direction rather than the polarization intensity, thus showing the maximum piezoelectric and dielectric response.
3. **Special Characteristics of HZO Materials**: During the change of the composition of HZO materials from pure HfO2 (monoclinic phase, paraelectric) to pure ZrO2 (tetragonal phase, anti - ferroelectric), the non - centrosymmetric orthorhombic ferroelectric phase (o - phase) can be made to appear by adjusting the preparation conditions. This characteristic makes HZO an ideal material for studying the MPB phenomenon.
### Research Methods
- **Sample Preparation**: Deposit about 10 nm - thick HZO thin films on SiO2/Si substrates by atomic layer deposition (ALD) technology, and adjust \( f_{t/o} \) through different ozone pulse times and annealing conditions.
- **Characterization Techniques**: Characterize the composition, thickness, and crystalline structure of the thin films by means of X - ray photoelectron spectroscopy (XPS), high - resolution transmission electron microscopy (HRTEM), X - ray diffraction (XRD), etc.
- **Performance Testing**: Measure the ferroelectric properties by LCII ferroelectric precision tester, and measure the dielectric constant by Keysight B1500A semiconductor device parameter analyzer.
### Main Findings
- **Influence of Structural Changes on Properties**: By adjusting \( f_{t/o} \), the research found that the sample with the lowest \( f_{t/o} \) exhibits the strongest ferroelectric polarization (\( P_r \) and \( E_c \)), while the sample with the highest \( f_{t/o} \) exhibits the highest dielectric constant (\( \epsilon_r \)).
- **Evidence of the MPB Region**: The experimental results show that as \( f_{t/o} \) increases, the dielectric constant \( \epsilon_r \) gradually increases, especially when \( f_{t/o} \approx 0.41 \), the dielectric constant reaches a maximum value of about 55, which provides direct evidence for the existence of the MPB region in HZO thin films.
### Conclusion
By systematically adjusting \( f_{t/o} \) in HZO thin films, the research has successfully proven the existence of the MPB region in HZO thin films. This finding not only provides a new perspective for understanding the ferroelectric and dielectric properties of HZO materials, but also provides a theoretical basis and technical support for the development of high - performance ferroelectric memories and other electronic devices.