Abstract:In the recent years, ferroelectricity in Hf0.5Zr0.5O2 (HZO) has been intensively studied due to its compatibility with silicon-based ferroelectric applications, high dielectric constant, and maintenance of robust ferroelectricity even at ultrathin thickness (<10 nm). This makes it a potential alternative material in ferroelectric field-effect transistors, complementary metal-oxide-semiconductor (CMOS) gate layers, and other applications. Previous studies have explained that ferroelectricity is attributed to the transformation from a tetragonal (t-phase) to orthorhombic (o-phase) structure during cooling. Conventional HZO thin films that are directly grown on silicon are polycrystalline, which reduces the polarization efficiency in CMOS devices. To address this problem, there is a demand for epitaxial freestanding HZO (FS-HZO) thin films that can be transferred without substrate constraints. In this study, we conducted comprehensive analysis of FS-HZO membranes with varying thicknesses to investigate the relationship between ferroelectric properties and thin film thickness. With monoclinic phase (m-phase) substitution, we notice a reduced o-phase fraction and gradual suppression of ferroelectricity when the thickness is over 20 nm. Owing to the large structure anisotropy, we further observed an increase in X-ray linear dichroism with increasing thickness. In addition, the dielectric constant of FS-HZO decreases by half compared to as-grown HZO due to increased leakage current from the cracks led by the freestanding process. This study presents an important method to combine oxides with silicon-based semiconductors and detailed information on various thicknesses of FS-HZO in aspects of structure and ferroelectricity, providing a potential solution to compatibility concerns in the context of next-generation nanoelectronics.

Towards an ideal high-κ HfO2-ZrO2-based dielectric

A CMOS-compatible morphotropic phase boundary

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance <tex>$(> 10^{14})$</tex> of HfZrO Anti-ferroelectrics for DRAM Applications

Ferroelectric and dielectric properties of Hf0.5Zr0.5O2 thin film near morphotropic phase boundary

Thickness-Dependent Ferroelectricity in Freestanding Hf 0.5 Zr 0.5 O 2 Membranes

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Engineering Hf 0.5 Zr 0.5 O 2 Ferroelectric/Anti- Ferroelectric Phases With Oxygen Vacancy and Interface Energy Achieving High Remanent Polarization and Dielectric Constants

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Novel Approach to High κ (∼59) and Low EOT (∼3.8 Å) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High-Pressure Annealing

Morphotropic Phase Boundary of Hf1- xZr xO2 Thin Films for Dynamic Random Access Memories

Interlayer-engineered local epitaxial templating induced enhancement in polarization (2P$_r$ > 70$μ$C/cm$^2$) in Hf$_{0.5}$Zr$_{0.5}$O$_2$ thin films

Enhancement of Ferroelectricity and Homogeneity of Orthorhombic Phase in Hf0.5Zr0.5O2 Thin Films

Ferroelectricity of pristine Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films fabricated by atomic layer deposition

Enhancement of ferroelectricity and homogeneity of orthorhombic phase in Hf 0.5 Zr 0.5 O 2 thin films

High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

Atomic Layer Deposition of La:Hf0.5Zr0.5O2 Thin Films with Abnormally High Dielectric Permittivity for Memory and Logic Devices

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2interfacial layer

Improved ferroelectric properties of CMOS back-end-of-line compatible Hf0.5Zr0.5O2 thin films by introducing dielectric layers

Silicon Atomic-Layer Doped Hf0.7Zr0.3O2 Films: Toward Low Coercive Field (0.64 MV/cm) and High Endurance (>1012 Cycles)