Abstract:The existence of a morphotropic phase boundary (MPB) inside HfO2-ZrO2 solid solution thin films has been predicted; if it exists, it provides a new path toward an ideal silicon-compatible dielectric. Herein, we investigate the structural evolution along with the dielectric and ferroelectric behaviors of differently designed HfO2-ZrO2 thin films to engineer the density of the MPB inside the film structure and consequently, enhance the dielectric properties. Polarization vs. electric field (P-E) measurements of Hf0.25Zr0.75O2 thin films reveal ferroelectric (FE)-antiferroelectric (AFE) characteristics. For this composition, the dielectric constant εr is higher than those of FE Hf0.5Zr0.5O2 and AFE ZrO2 thin films; the difference is attributed to the formation of the MPB. To increase the density of the MPB and subsequently the dielectric properties, 10 nm Hf0.5Zr0.5O2 (FE)/ZrO2 (AFE) nanolaminates were prepared with different lamina thicknesses tL. The coexistence of FE and AFE properties was confirmed by structural characterization studies and P-E measurements. The thinnest layered nanolaminate (tL = 6 Å) showed the strongest dielectric constant εr∼ 60 under a small signal ac electric field of ∼50 kV cm-1; this is the highest εr so far observed in HfO2-ZrO2 thin films. This behavior was attributed to the formation of an MPB near FE/AFE interfaces. The new design provides a promising approach to achieve an ideal high-κ CMOS-compatible device for the current electronic industry.

Silicon Atomic-Layer Doped Hf0.7Zr0.3O2 Films: Toward Low Coercive Field (0.64 MV/cm) and High Endurance (>1012 Cycles)

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance <tex>$(> 10^{14})$</tex> of HfZrO Anti-ferroelectrics for DRAM Applications

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

The Enhanced Polarization Switching Speed and Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

The Enhanced Polarization Switching Speed and Endurance in Hf0.5Zr0.5O2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

A Stable Rhombohedral Phase in Ferroelectric Hf(Zr)1+xO2 Capacitor with Ultralow Coercive Field.

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

Sub-0.5 nm equivalent oxide thickness scaling for Si-doped Zr1-xHfxO2 thin film without using noble metal electrode

High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films

Enhancement of Ferroelectricity and Homogeneity of Orthorhombic Phase in Hf0.5Zr0.5O2 Thin Films

Excellent Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Induced by Al2O3 Dielectric Layer

Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates

Robust Breakdown Reliability and Improved Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Using Grain Boundary Interruption

Enhancement of ferroelectricity and homogeneity of orthorhombic phase in Hf 0.5 Zr 0.5 O 2 thin films

Inductive Crystallization Effect of Atomic-Layer-deposited Hf0.5Zr0.5O2 Films for Ferroelectric Application

Towards an ideal high-κ HfO2-ZrO2-based dielectric

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Programmable Ferroelectricity in Hf0.5Zr0.5O2 Enabled by Oxygen Defect Engineering.

Ferroelectricity of pristine Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films fabricated by atomic layer deposition

Improving HfO2 Thick Films for SiC Power Devices by Si, Y and La Doping