Abstract:TiO2-doped HfO2 gate dielectric thin films have been deposited on Si(100) substrates by RF sputtering. The component, morphology, structure, optical and interfacial properties of Hf-1 xTixO2 films related to TiO2 concentration are systematically investigated by atomic force microscope (AFM), X-ray diffraction (XRD), spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), and Fourier transformation infrared (FTIR). By employing Cauchy-Urbach model, the optical constants, such as refractive index (n), extinction coefficient (k), absorption coefficient (alpha), and optical band gap (E-g) have been determined precisely. Measurements from XRD have confirmed that TiO2 incorporating into HfO2 films leads to the increase of the crystallization temperature of HfO2 films with increasing the TiO2 concentration. SE analyses have indicated that reduction in band gap and refractive index has been observed with increasing the TiO2 component in Hf-1 xTixO2 films. The increase in Urbach parameter E-U with the increase of TiO2 concentration also suggests the rise in disorder for Hf-1 xTixO2 films. FTIR measurements for Hf-1 xTixO2/Si gate stack indicate the existence of the interfacial layer regardless of the TiO2 concentration. For the 9% TiO2-doped HfO2 samples, the shift in FTIR characteristic peak suggests the formation of the silicate layer, which leads to the suppressed interfacial layer growth during deposition. As a result, it can be conclude that the TiO2 component in Hf-1 xTixO2 films should be controlled precisely to guarantee interfacial properties of Hf-1 xTixO2/Si gate stacks. (C) 2014 Elsevier B.V. All rights reserved.

Improving HfO2 Thick Films for SiC Power Devices by Si, Y and La Doping

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Modulation of the structural and optical properties of sputtering-derived HfO2 films by deposition power

Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition

Silicon Atomic-Layer Doped Hf0.7Zr0.3O2 Films: Toward Low Coercive Field (0.64 MV/cm) and High Endurance (>1012 Cycles)

The influence of lanthanum doping position in ultra-thin HfO2 films for high-k gate dielectrics

The influence of physical and electrical properties in HfO2 thin film with different lanthanum doping position

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Effect of Gd and Si Co-Doping on the Band Alignment and Electrical Properties of HfO2 Dielectric Films Prepared by Atomic Layer Deposition

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Effect of Lanthanum-Aluminum Co-Doping on Structure of Hafnium Oxide Ferroelectric Crystals.

Effect of Y concentration and film thickness on microstructure and electrical properties of HfO2 based thin films

Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material

Competitive Si and La Effect in Hfo2 Phase Stabilization in Multi-Layer (la2o3)(0.08)(hfo2) Films

Sub-0.5 nm equivalent oxide thickness scaling for Si-doped Zr1-xHfxO2 thin film without using noble metal electrode

Effects of Rapid Thermal Annealing on Structural, Chemical, and Electrical Characteristics of Atomic-Layer Deposited Lanthanum Doped Zirconium Dioxide Thin Film on 4H-Sic Substrate

Doping Ferroelectric Hafnium Oxide by in-Situ Precursor Mixing

Stabilization of Tetragonal Phase in Hafnium Zirconium Oxide by Cation Doping for High-K Dielectric Insulators

Lanthanum doped hafnium oxide thin films deposited on a lateral high aspect ratio structure using atomic layer deposition: A comparative study of surface composition and uniformity using x-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry

Epitaxial Growth of HfO2 Doped CeO2 Thin Films on Si(001) Substrates for High-Κ Application