Abstract:Combining the experimental characterization with the large-scale density functional theory calculations based on finite-element discretization (DFT-FE), we address the stabilization of polar orthorhombic phases (o-HfO2) in Al:HfO2 nanofilms by means of the atomic registry distortions and lattice deformation caused by Al substitutional defects (Al-Hf) and Schottky defects (2Al(Hf) + V-O) in tetragonal phases (t-HfO2) or monoclinic phases (m-HfO2). The phase transformation directly from the t-HfO2 into polar o-HfO2 are also elucidated within a heterogeneous distribution of Al dopants in both t-HfO2 bulk crystal structure and Al:HfO2 nanofilm. It is revealed using large-scale DFT calculations that the Al substitutional defects (Al-Hf) or the Schottky defect (2Al(Hf) + V-O) could induce the highly extended atomic registry distortions or lattice deformation in the t- and m-HfO2 phases, but such effects are greatly diminished in ferroelectric orthorhombic phase. By purposely engineering the multiple Al-Hf defects to form dopant-rich layers in paraelectric t-HfO2 nanofilm or bulk crystal, the induced extended lattice distortions surrounding the defect sites exhibit the shearing-like atomic displacement vector field. The large-scale DFT calculations further predicted that the shearing-like microscopic lattice distortions could directly induce the phase transformation from the t-HfO2 into polar orthorhombic phase in both Al:HfO2 bulk crystal and nanofilms, leading to the large remanent polarization observed in Al:HfO2 nanofilms with the presence of Al-rich layers. The current study demonstrates that the ferroelectricity of HfO2 bulk crystal or thin film can be optimized and tuned by delicately engineering both the distribution and concentration of Al dopants in atomic layer deposition without applying the top capping electrode, providing the extra flexibility for designing the HfO2 based electronic devices in the future.

Effect of Lanthanum-Aluminum Co-Doping on Structure of Hafnium Oxide Ferroelectric Crystals.

The Doping Effect on the Intrinsic Ferroelectricity in Hafnium Oxide-Based Nano-Ferroelectric Devices

Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material

Ferroelectric and Antiferroelectric Phenomenon in Lanthanum Doped Hafnium Based Thin Films

Effect of Doping Concentration on Intrinsic Ferroelectric Properties of HfLaO-based Ferroelectric Memory

Epitaxial growth and phase evolution of ferroelectric La-doped HfO 2 films

Epitaxial Growth and Phase Evolution of Ferroelectric La-doped HfO2 Films

Effect of Al2O3 Insertion Layer on Ferroelectricity in HfO2/ZrO2 Nanolaminates

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Ferroelectricity in the Al doped HfO2

Inductive Crystallization Effect of Atomic-Layer-deposited Hf0.5Zr0.5O2 Films for Ferroelectric Application

Regulating Crystal Structure and Ferroelectricity in Sr Doped HfO2 Thin Films Fabricated by Metallo-Organic Decomposition

Modulating the Microscopic Lattice Distortions Through the Al-rich Layers for Boosting the Ferroelectricity in Al:HfO2 Nanofilms

Ferroelectricity in Al-doped HfO2 on Highly Doped Si Substrate

Excellent ferroelectric Hf0.5Zr0.5O2 thin films with ultra-thin Al2O3 serving as capping layer

Stabilizing the Ferroelectric Phase in HfAlO Ferroelectric Tunnel Junction with Different Bottom Electrodes

Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer

Conduction mechanisms of ferroelectric La:HfO 2 ultrathin films

Lanthanum doped hafnium oxide thin films deposited on a lateral high aspect ratio structure using atomic layer deposition: A comparative study of surface composition and uniformity using x-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry

Understanding the Effect of Oxygen Content on Ferroelectric Properties of Al-Doped HfO Thin Films

Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping