Abstract:Hafnium-oxide-based materials are considered a promising candidate for next-generation nonvolatile memory devices owing to their good CMOS compatibility and robust ferroelectricity at the nanoscale. In this work, we synthesize highly (111)-oriented La-doped HfO 2 (HLO) ferroelectric thin films via pulsed laser deposition. Furthermore, the effect of La dopant concentration, thickness, and growth temperature on the ferroelectricity of HLO films is investigated in detail. A maximum remnant polarization of ∼9 μC/cm 2 is achieved for only the 5-nm-thick 3 mol. % HLO films without a wake-up process. The 180° inversion of the domain, the butterfly-shaped capacitance–voltage curve, and typical ferroelectric displacement current curve further demonstrate the robust ferroelectricity at the nanoscale. Moreover, the phase evolves from the monoclinic to the orthorhombic and subsequently to the cubic phase with increasing La concentration, which is due to the combined action of oxygen vacancy, epitaxial strain, and chemical pressure. Additionally, in the interface configuration of HLO/La 0.7 Sr 0.3 MnO 3 (LSMO), the MnO 2 0.7− layer is substituted by the HLO layer on the MnO 2 -terminated surface of LSMO, which can be attributed to the fact that the HLO layer with higher electronegativity replaces the MnO 2 0.7− layer with the same electronegativity in the HLO film. Therefore, this study provides a reliable pathway for directly obtaining a lightly doped HLO ferroelectric thin film, which can help to broaden the understanding of the ferroelectric physical mechanisms with element doping.

Ferroelectric and Antiferroelectric Phenomenon in Lanthanum Doped Hafnium Based Thin Films

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance <tex>$(> 10^{14})$</tex> of HfZrO Anti-ferroelectrics for DRAM Applications

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance (>1014) of HfZrO Anti-ferroelectrics for DRAM Applications

Effect of Lanthanum-Aluminum Co-Doping on Structure of Hafnium Oxide Ferroelectric Crystals.

Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Epitaxial Growth and Phase Evolution of Ferroelectric La-doped HfO2 Films

Epitaxial growth and phase evolution of ferroelectric La-doped HfO 2 films

Excellent Reliability in Hf0.5Zr0.5O2 Based Ferroelectric Device with Oxygen-Doped ITO Electrodes

A Flexible Hf0.5Zr0.5O2 Thin Film with Highly Robust Ferroelectricity

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Inductive Crystallization Effect of Atomic-Layer-deposited Hf0.5Zr0.5O2 Films for Ferroelectric Application

Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material

Improved Ferroelectricity and Tunneling Electroresistance by Inducing the ZrO2 Intercalation Layer in La:HfO2 Thin Films

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Ferroelectricity of pristine Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films fabricated by atomic layer deposition

The Doping Effect on the Intrinsic Ferroelectricity in Hafnium Oxide-Based Nano-Ferroelectric Devices

Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory

Ferroelectricity in Ultrathin HfO2-Based Films by Nanosecond Laser Annealing

A Comparative Study on the Polarization, Reliability, and Switching Dynamics of HfO 2 -ZrO 2 -HfO 2 and ZrO 2 -HfO 2 -ZrO 2 Superlattice Ferroelectric Films