Abstract:An outstanding potential of ferroelectric Hf0.5Zr0.5O2 ultra‐thin films to create a flexible non‐volatile memory is elucidated. CMOS‐compatible, highly flexible and resistant to tensile load ferroelectric Hf0.5Zr0.5O2‐based memory devices encapsulated in a biocompatible polyimide package exhibit excellent memory window and an excellent mechanical performance. Experimentally measured ferroelectric and dielectric properties under tension are explained by theoretical calculations. Next‐generation flexible electronics for healthcare applications require biocompatible flexible non‐volatile memory for data storage. Ultra‐thin ferroelectric hafnium oxide films offer great potential for flexible memories due to their potential flexibility and perfect compatibility with modern technologies. This study presents ultra‐flexible and stretchable memory devices based on 10‐nm‐thick Hf0.5Zr0.5O2 film fabricated by an innovative technology involving encapsulation of the devices in a biocompatible organic package. They exhibit high memory functionality (remanent polarization of 27 μC cm−2) and withstand extreme mechanical conditions, including folding in half, multiple bending up to 150 000 bending cycles as well as tension with loads up to 1.5 kg. Further, flexible devices are employed as a platform to elucidate the fundamental role of mechanical stress in ferroelectricity of hafnia both experimentally and theoretically. Direct in situ experiment demonstrates that in‐plane tension causes changes in spontaneous polarization, coercive voltage, permittivity, and conductivity. First‐principle calculations explain the role of mechanical stress in ferroelectric and dielectric properties of hafnia. In applications, this work establishes a foundation for the implementation of biocompatible, high‐performance flexible ferroelectric memory, and in the field of ferroelectric materials fundamentals, it provides insight into the critical role of the residual mechanical stress that is inevitably present in thin films.

Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory

A Flexible Hf0.5Zr0.5O2 Thin Film with Highly Robust Ferroelectricity

Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility

High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics

Superflexible and Stretchable Ferroelectric Memory on a Biocompatible Platform

MoS2-based Ferroelectric Field-Effect Transistor with Atomic Layer Deposited Hf0.5Zr0.5O2 Films Toward Memory Applications

Excellent Reliability in Hf0.5Zr0.5O2 Based Ferroelectric Device with Oxygen-Doped ITO Electrodes

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure.

2-Bit/cell Operation of Hf0.5Zr0.5O2 Based FeFET Memory Devices for NAND Applications

Integration and Electrical Properties of Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Film on Bulk $\beta$ -Ga 2 O 3 (−201) Substrate for Memory Applications

Flexible Ferroelectric Hafnia-Based Synaptic Transistor by Focused-Microwave Annealing

Precise control of fatigue, wake-up, charge injection, and break-down in Hf0.5Zr0.5O2-based ferroelectric memories

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf$_{\text{0}.\text{5}}$Zr$_{\text{0}.\text{5}}$O$_{\text{2}}$ Ferroelectric Memory Arrays

Thermally Stable and Radiation Hard Ferroelectric Hf0.5Zr0.5O2 Thin Films on Muscovite Mica for Flexible Nonvolatile Memory Applications

ZrO 2 Ferroelectric FET for Non-volatile Memory Application

Ferroelectricity Based Memory Devices: New-Generation of Materials and Applications

Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors

Hafnium Oxide‐Based Ferroelectric Devices for Computing‐in‐Memory Applications

Electric Field Gradient‐Controlled Domain Switching for Size Effect‐Resistant Multilevel Operations in HfO2‐Based Ferroelectric Field‐Effect Transistor

Excellent Hzo Ferroelectric Thin Films on Flexible Pet Substrate