Abstract:Traditional von Neumann architecture is facing severe challenges due to separated physical structure of memory, which inspires the development of in‐memory computing electronics. Intriguingly, HfO2 is widely studied in the semiconductor field, showing great potential in constructing emerging electronics. Here, this work reviews the progress of HfO2 from materials to devices, including crystal structure, first‐principles calculation, and neuromorphic computing application. Traditional von Neumann architecture is facing severe challenges due to separated physical structure of memory and processing units, which inspires the development of in‐memory computing electronics. Intriguingly, as a kind of complementary metal‐oxide‐semiconducor compatible ferroelectric material, HfO2 is widely studied based on first‐principles calculation in the semiconductor field, showing great potential in constructing emerging electronics. Different structures including ferroelectric diode, ferroelectric field effect transistor, and ferroelectric tunnel junctions based on HfO2 are proposed for in‐memory computing application. Here, this work reviews the progress of HfO2 from materials to devices, including crystal structure, fatigue mechanism, first‐principles calculation, and neuromorphic computing application of HfO2‐based device. This work can provide a reference for the HfO2 ferroelectric device development for next‐generation in‐memory computing applications.

Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf$_{\text{0}.\text{5}}$Zr$_{\text{0}.\text{5}}$O$_{\text{2}}$ Ferroelectric Memory Arrays

Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf0.5Zr0.5O2 Ferroelectric Memory Arrays

Integration and Electrical Properties of Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Film on Bulk $\beta$ -Ga 2 O 3 (−201) Substrate for Memory Applications

3D Nano Hafnium‐Based Ferroelectric Memory Vertical Array for High‐Density and High‐Reliability Logic‐In‐Memory Application

Excellent Reliability in Hf0.5Zr0.5O2 Based Ferroelectric Device with Oxygen-Doped ITO Electrodes

1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline

Epitaxial Integration of Tetragonal Bifeo3 with Silicon for Nonvolatile Memory Applications

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory

A Back-End-Of-Line Compatible, Ferroelectric Analog Non-Volatile Memory

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure.

Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory

Hafnium Oxide‐Based Ferroelectric Devices for Computing‐in‐Memory Applications

Ferroelectric HfO 2 Memory Transistors With High- κ Interfacial Layer and Write Endurance Exceeding 10 10 Cycles

A 9mb HZO-Based Embedded FeRAM with 1012-Cycle Endurance and 5/7ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier

A highly CMOS compatible hafnia-based ferroelectric diode

ZrO 2 Ferroelectric FET for Non-volatile Memory Application

Ferroelectric Hafnium Oxide Films for In‐Memory Computing Applications

Hafnium-Based Ferroelectric Memory Device with Integrated Selective Function Using Crested Band Structure

Ferroelectricity Based Memory Devices: New-Generation of Materials and Applications

Ferroelectric HfO$_2$ Memory Transistors with High-$κ$ Interfacial Layer and Write Endurance Exceeding $10^{10}$ Cycles