Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf0.5Zr0.5O2 Ferroelectric Memory Arrays

Shuming Guo,Jiajie Yu,Hao Wang,Xingcheng Jin,Hongbo Li,Chao Wu,Lin Chen,Yinyin Lin,David Wei Zhang

DOI: https://doi.org/10.1109/ted.2024.3394460

IF: 3.1

2024-05-25

IEEE Transactions on Electron Devices

Abstract:Emerging embedded nonvolatile memory (eNVM) based on hafnium oxide ferroelectric materials has shown great advantages such as high reliability, high speed, good scalability, and CMOS process compatibility. Here, a 2T2C structure ferroelectric memory (FRAM) is proposed based on the 180-nm CMOS technology and a TiN/Hf0.5Zr0.5O2/TiN ferroelectric capacitor. The device exhibits great ferroelectric properties with the remnant polarization (2P of C/cm2 under a low operation voltage of 2 V. Also, it shows great high-temperature endurance and retention properties, which has no obvious degradation after 1010 cycles pulses and 104 s under 175 °C. In addition, a 2-Mb capacity memory chip with kb subarrays using the 2T2C structure and separated word lines (WLs) was fabricated. The wafer can maintain a high yield of 98.28% after baking for 30 h at 175 °C, which shows great reliability in the chip level.

engineering, electrical & electronic,physics, applied