Abstract:Exploring the high-performance non-volatile memories for realizing energy-efficient memory in complementary metal–oxide–semiconductor (CMOS) circuits, memory-in-computing, and the artificial synapse is the key to the rapid growth in data markets. One of the significant aspects is the development of non-volatile field-effect transistor (NVFET), which possesses the advantage of decoupling the "write" and "read" functions using the third terminal. In this work, building on a semiconductor channel integrated with an amorphous Al2O3 gate insulator, we report a ferroelectric-like NVFET memory and analog synapse that differ from those utilizing polycrystalline-doped HfO2 films. Switchable polarization ( ${P}$ ) is demonstrated in TaN/Al2O3/TaN, TaN/Al2O3/Si, and TaN/Al2O3/Ge stacks, which is attributed to the voltage-modulation of the oxygen vacancy and negative charge dipoles in gate insulator. A TaN/Al2O3/Ge capacitor achieves over 1010 cycles endurance of polarization-voltage measurement. A memory window (MW) of 0.85 V is obtained in the NVFET integrated with Al2O3 insulator under ±3 V at 100 ns program/erase (P/E) condition, and the P/E voltage can be reduced to ±1.6 V. A NVFET analog synapse is demonstrated to have a dynamic range above 100 [asymmetry ( $vert alpha _{p} - alpha _{d} vert $ )< 0.1] with ±2 V/100 ns potentiation/depression pulses. These results can be extended universally to other amorphous oxides and show promise for 3-D (fin-shaped) NVFETs with very small fin pitch.

Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)

ZrO 2 Ferroelectric FET for Non-volatile Memory Application

2-Bit/cell Operation of Hf0.5Zr0.5O2 Based FeFET Memory Devices for NAND Applications

Electric Field Gradient‐Controlled Domain Switching for Size Effect‐Resistant Multilevel Operations in HfO2‐Based Ferroelectric Field‐Effect Transistor

Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf$_{\text{0}.\text{5}}$Zr$_{\text{0}.\text{5}}$O$_{\text{2}}$ Ferroelectric Memory Arrays

Energy-efficient Non-Volatile Ferroelectric Based Electrostatic Doping Multilevel Optical Readout Memory.

Improved Multibit Storage Reliability by Design of Ferroelectric Modulated Antiferroelectric Memory

Low Operation Voltage, High-Temperature Reliable, and High-Yield BEOL Integrated Hf0.5Zr0.5O2 Ferroelectric Memory Arrays

Electric Field Gradient‐Controlled Domain Switching for Size Effect‐Resistant Multilevel Operations in HfO 2 ‐Based Ferroelectric Field‐Effect Transistor

Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors

Low-voltage operating flexible ferroelectric organic field-effect transistor nonvolatile memory with a vertical phase separation P(VDF-TrFE-CTFE)/PS dielectric

Adaptive Circuit Approaches to Low-Power Multi-Level/Cell FeFET Memory

Non-Volatile Field-Effect Transistors Enabled by Oxygen Vacancy-Related Dipoles for Memory and Synapse Applications

Low-Voltage Multilevel Memory Based on Organic Thin-Film Transistor

Laminated Ferroelectric FET With Large Memory Window and High Reliability

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure.

HAO $+$ Al $_{\text{2}}$ O $_{\text{3}}$ FeFET Gate-Stack for Overall Improvement in Operating Voltage, Endurance, and Retention

Anti-Ferroelectric ZrO$_{\text{2}}$ Capacitors with Ultralow Operating Voltage ($<$1.2 V) and Improved Endurance Toward Logic Compatible Edram

Ferroelectric HfO 2 Memory Transistors With High- κ Interfacial Layer and Write Endurance Exceeding 10 10 Cycles

A Reliable 2 Bit MLC FeFET with High Uniformity and 109 Endurance by Gate Stack and Write Pulse Co-optimization

Logic Compatible High-Performance Ferroelectric Transistor Memory