Abstract:Exploring the high-performance non-volatile memories for realizing energy-efficient memory in complementary metal–oxide–semiconductor (CMOS) circuits, memory-in-computing, and the artificial synapse is the key to the rapid growth in data markets. One of the significant aspects is the development of non-volatile field-effect transistor (NVFET), which possesses the advantage of decoupling the "write" and "read" functions using the third terminal. In this work, building on a semiconductor channel integrated with an amorphous Al2O3 gate insulator, we report a ferroelectric-like NVFET memory and analog synapse that differ from those utilizing polycrystalline-doped HfO2 films. Switchable polarization ( ${P}$ ) is demonstrated in TaN/Al2O3/TaN, TaN/Al2O3/Si, and TaN/Al2O3/Ge stacks, which is attributed to the voltage-modulation of the oxygen vacancy and negative charge dipoles in gate insulator. A TaN/Al2O3/Ge capacitor achieves over 1010 cycles endurance of polarization-voltage measurement. A memory window (MW) of 0.85 V is obtained in the NVFET integrated with Al2O3 insulator under ±3 V at 100 ns program/erase (P/E) condition, and the P/E voltage can be reduced to ±1.6 V. A NVFET analog synapse is demonstrated to have a dynamic range above 100 [asymmetry ( $vert alpha _{p} - alpha _{d} vert $ )< 0.1] with ±2 V/100 ns potentiation/depression pulses. These results can be extended universally to other amorphous oxides and show promise for 3-D (fin-shaped) NVFETs with very small fin pitch.

Non-Volatile Field-Effect Transistors Enabled by Oxygen Vacancy-Related Dipoles for Memory and Synapse Applications

Nonvolatile Ferroelectric Field-Effect Transistors.

Non-Volatile FETs with Amorphous (Al<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub>, ZrO<sub>2</sub>, etc.) Gate Insulators

Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory

Synaptic Plasticity in Novel Non-Volatile FET with Amorphous Gate Insulator Enabled by Oxygen Vacancy Related Dipoles

Memory Behavior of an Al2O3 Gate Dielectric Non-Volatile Field-Effect Transistor

Epitaxial Integration of Tetragonal Bifeo3 with Silicon for Nonvolatile Memory Applications

Memory Behavior of an Al 2 O 3 Gate Dielectric Non-Volatile Field-Effect Transistor

Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors

Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO2 Film

A ferroelectric fin diode for robust non-volatile memory

Ultrathin Nitride Ferroic Memory with Large ON/OFF Ratios for Analog In‐memory Computing

Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure.

Ferroelectric Perovskite/MoS2 Channel Heterojunctions for Wide-Window Nonvolatile Memory and Neuromorphic Computing.

High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

Nonvolatile Memory and Artificial Synapse Based on the Cu/P(VDF-TrFE)/Ni Organic Memtranstor

Reconfigurable Quasi-Nonvolatile Memory/Subthermionic FET Functions in Ferroelectric-2D Semiconductor vdW Architectures

A Semi-Floating Gate Memory Based on Van Der Waals Heterostructures for Quasi-Non-volatile Applications

High-Performance C60 Coupled Ferroelectric Enhanced MoS2 Nonvolatile Memory.

Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)