Abstract:Ferroelectric field-effect transistors (FeFETs) with semiconductors as the channel material and ferroelectrics as the gate insulator are attractive and/or promising devices for application in nonvolatile memory. In FeFETs, the conductivity states of the semiconductor are utilized to explore the polarization directions of the ferroelectric material. Herein, we report FeFETs based on a few layers of MoS2 on a 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN–PT) single crystal with switchable multilevel states. It was found that the On–Off ratios can reach as high as 106. We prove that the interaction effect of ferroelectric polarization and interface charge traps has a great influence on the transport behaviors and nonvolatile memory characteristics of MoS2/PMN–PT FeFETs. In order to further study the underlying physical mechanism, we have researched the time-dependent electrical properties in the temperature range from 300 to 500 K. The separation of effects from ferroelectric polarization and interfacial traps on electrical behaviors of FeFETs provides us with an opportunity to better understand the operation mechanism, which suggests a fantastic way for multilevel, low-power consumption, and high-density nonvolatile memory devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c09951?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c09951</a>.In-plane strain curve for the (001)-oriented PMN–PT crystal (Figure S1); the transfer characteristic curves of MoS2–PMN–PT FeFETs (Figures S2 and S3); data retention characteristics of MoS2–PMN–PT FeFETs (Figure S4); measurement-temperature-dependent transport properties of MoS2–PMN–PT FeFETs in the range from 150 to 300 K (Figure S5) (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c09951/suppl_file/am0c09951_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Side-Gated In2O3 Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications.

Nonvolatile Ferroelectric Field-Effect Transistors.

Epitaxial Integration of Tetragonal Bifeo3 with Silicon for Nonvolatile Memory Applications

Ferroelectric Fet for Nonvolatile Memory Application with Two-Dimensional Mose2 Channels

ZrO 2 Ferroelectric FET for Non-volatile Memory Application

Non-Volatile Field-Effect Transistors Enabled by Oxygen Vacancy-Related Dipoles for Memory and Synapse Applications

Ferroelectric Field-Effect Transistors for Logic and In-Situ Memory Applications

Nonvolatile Ferroelectric Memory Effect in Ultrathin Α‐in2se3

Ferroelectric Field-Effect Transistors Based on WSe2/CuInP2S6 Heterostructures for Memory Applications

MoS2-based Ferroelectric Field-Effect Transistor with Atomic Layer Deposited Hf0.5Zr0.5O2 Films Toward Memory Applications

High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

Gate-controlled Non-Volatile Graphene-Ferroelectric Memory

Ferroelectric Field-Effect Transistors Based on WSe 2 /CuInP 2 S 6 Heterostructures for Memory Applications

A Gate Programmable van der Waals Metal‐Ferroelectric‐Semiconductor Vertical Heterojunction Memory

Hysteresis in In2O3:Zn Nanowire Field-Effect Transistor and Its Application As a Nonvolatile Memory Device

Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure.

Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors

Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors

Design of 2t/cell and 3t/cell Nonvolatile Memories with Emerging Ferroelectric FETs.

Ferroelectric-Modulated MoS 2 Field-Effect Transistors as Multilevel Nonvolatile Memory

Ferroelectric Perovskite/MoS2 Channel Heterojunctions for Wide-Window Nonvolatile Memory and Neuromorphic Computing.