Abstract:The authors report on the fabrication and application of a ferroelectric transistor integrated with a van der Waals ferroelectrics heterostructure (CuInP2S6/α‐In2Se3). Leveraging enhanced polarization originating from the dipole coupling, the fabricated device exhibits a large memory window and nonvolatile memory characteristics with long retention time and stable cyclic endurance, providing a promising pathway for exploring low‐dimensional ferroelectronics. To address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–memory functionalities. Herein, the fabrication and application of an Fe‐FET, which is integrated with a van der Waals ferroelectrics heterostructure (CuInP2S6/α‐In2Se3), is reported. Leveraging enhanced polarization originating from the dipole coupling of CIPS and α‐In2Se3, the fabricated Fe‐FET exhibits a large memory window of 14.5 V at VGS = ±10 V, reaching a memory window to sweep range of ≈72%. Piezoelectric force microscopy measurements confirm the enhanced polarization‐induced wider hysteresis loop of the double‐stacked ferroelectrics compared to single ferroelectric layers. The Landau–Khalatnikov theory is extended to analyze the ferroelectric characteristics of a ferroelectric heterostructure, providing detailed explanations of the hysteresis behaviors and enhanced memory window formation. The fabricated Fe‐FET shows nonvolatile memory characteristics, with a high on/off current ratio of over 106, long retention time (>104 s), and stable cyclic endurance (>104 cycles). Furthermore, the applicability of the ferroelectrics heterostructure is investigated for artificial synapses and for hardware neural networks through training and inference simulation. These results provide a promising pathway for exploring low‐dimensional ferroelectronics.

Ferroelectric Field-Effect Transistors Based on WSe2/CuInP2S6 Heterostructures for Memory Applications

Ferroelectric Field-Effect Transistors Based on WSe 2 /CuInP 2 S 6 Heterostructures for Memory Applications

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors

Epitaxial Integration of Tetragonal Bifeo3 with Silicon for Nonvolatile Memory Applications

Realization of flexible in-memory computing in a van der Waals ferroelectric heterostructure tri-gate transistor

Ferroelectric Field-Effect Transistors for Logic and In-Situ Memory Applications

Ferroelectric Perovskite/MoS2 Channel Heterojunctions for Wide-Window Nonvolatile Memory and Neuromorphic Computing.

A Ferroelectric Semiconductor Field-Effect Transistor

Nonvolatile Ferroelectric Field-Effect Transistors.

A Gate Programmable van der Waals Metal‐Ferroelectric‐Semiconductor Vertical Heterojunction Memory

Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing

Electrically Tuning Interfacial Ion Redistribution for mica/WSe2 Memory Transistor

Ferroelectric van der Waals heterostructures of CuInP2S6for non-volatile memory device applications

Van der Waals Ferroelectric Semiconductor Field Effect Transistor for In-Memory Computing

Engineering Ferroelectric‐/Ion‐Modulated Conductance in 2D Vdw CuInP2S6 for Non‐Volatile Digital Memory and Artificial Synapse

Van der Waals engineering of ferroelectric heterostructures for long-retention memory

Ferroelectric Fet for Nonvolatile Memory Application with Two-Dimensional Mose2 Channels

Multistate ferroelectric diodes with high electroresistance based on van der Waals heterostructures

Nonvolatile Ferroelectric Memory Effect in Ultrathin Α‐in2se3

All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration