Abstract:In recent years, the emergence of numerous applications of artificial intelligence (AI) has sparked a new technological revolution. These applications include facial recognition, autonomous driving, intelligent robotics, and image restoration. However, the data processing and storage procedures in the conventional von Neumann architecture are discrete, which leads to the "memory wall" problem. As a result, such architecture is incompatible with AI requirements for efficient and sustainable processing. Exploring new computing architectures and material bases is therefore imperative. Inspired by neurobiological systems, in-memory and in-sensor computing techniques provide a new means of overcoming the limitations inherent in the von Neumann architecture. The basis of neural morphological computation is a crossbar array of high-density, high-efficiency non-volatile memory devices. Among the numerous candidate memory devices, ferroelectric memory devices with non-volatile polarization states, low power consumption and strong endurance are expected to be ideal candidates for neuromorphic computing. Further research on the complementary metal-oxide-semiconductor (CMOS) compatibility for these devices is underway and has yielded favorable results. Herein, we first introduce the development of ferroelectric materials as well as their mechanisms of polarization reversal and detail the applications of ferroelectric synaptic devices in artificial neural networks. Subsequently, we introduce the latest developments in ferroelectrics-based in-memory and in-sensor computing. Finally, we review recent works on hafnium-based ferroelectric memory devices with CMOS process compatibility and give a perspective for future developments.

Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing

Computing-In-Memory Using Ferroelectrics: From Single- to Multi-Input Logic

Enhancing Memory Window Efficiency of Ferroelectric Transistor for Neuromorphic Computing via Two‐Dimensional Materials Integration

Nonvolatile Ferroelectric Field-Effect Transistors.

Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing

Ferroelectric memory based on two-dimensional materials for neuromorphic computing

Ferroelectric materials for neuroinspired computing applications

Multimodal 2D Ferroelectric Transistor with Integrated Perception-and-Computing-in-Memory Functions for Reservoir Computing

Emerging 2D Ferroelectric Devices for In‐Sensor and In‐Memory Computing

Asymmetric Ferroelectric-Gated Two-Dimensional Transistor Integrating Self-Rectifying Photoelectric Memory and Artificial Synapse

A ferroelectric fin diode for robust non-volatile memory

Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors

Two-dimensional Ferroelectric Semiconductor Floating-Gate Transistor with Light-Tunable Field Effect for Memory and Photo-Synapse

Ferroelectric Perovskite/MoS2 Channel Heterojunctions for Wide-Window Nonvolatile Memory and Neuromorphic Computing.

Ferroelectrics: Nonvolatile Ferroelectric Memory Effect in Ultrathin α‐In <sub>2</sub> Se <sub>3</sub> (Adv. Funct. Mater. 20/2019)

Ferroelectric Field-Effect Transistors for Logic and In-Situ Memory Applications

Integrated In‐Memory Sensor and Computing of Artificial Vision Based on Full‐vdW Optoelectronic Ferroelectric Field‐Effect Transistor

An in-memory computing architecture based on a duplex two-dimensional material structure for in situ machine learning

Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing

Nonvolatile Ferroelectric Memory Effect in Ultrathin Α‐in2se3

Ultrathin Nitride Ferroic Memory with Large ON/OFF Ratios for Analog In‐memory Computing