Computing-In-Memory Using Ferroelectrics: From Single- to Multi-Input Logic

Qingrong Huang,Dayane Reis,Chao Li,Di Gao,Michael Niemier,Xiaobo Sharon Hu,Mohsen Imani,Xunzhao Yin,Cheng Zhuo
DOI: https://doi.org/10.1109/MDAT.2021.3063336
2022-01-01
Abstract:The article presents computing-in-memory designs using ferroelectric field-effect transistors. Thanks to good support for various key logic operations, these designs can be used for multiple learning tasks/paradigms, from classical machine learning to hyperdimensional computing, and achieve both compactness and efficiency.
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