Abstract:The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with von Neumann architectures, which have separate processing and storage units, brain-inspired in-memory computing uses the same basic device structure for logic operations and data storage<a href="#ref-CR1">1</a>,<a href="#ref-CR2">2</a>,<a href="/articles/s41586-020-2861-0#ref-CR3">3</a>, thus promising to reduce the energy cost of data-centred computing substantially<a href="/articles/s41586-020-2861-0#ref-CR4">4</a>. Although there is ample research focused on exploring new device architectures, the engineering of material platforms suitable for such device designs remains a challenge. Two-dimensional materials<a href="/articles/s41586-020-2861-0#ref-CR5">5</a>,<a href="/articles/s41586-020-2861-0#ref-CR6">6</a> such as semiconducting molybdenum disulphide, MoS2, could be promising candidates for such platforms thanks to their exceptional electrical and mechanical properties<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="/articles/s41586-020-2861-0#ref-CR9">9</a>. Here we report our exploration of large-area MoS2 as an active channel material for developing logic-in-memory devices and circuits based on floating-gate field-effect transistors (FGFETs). The conductance of our FGFETs can be precisely and continuously tuned, allowing us to use them as building blocks for reconfigurable logic circuits in which logic operations can be directly performed using the memory elements. After demonstrating a programmable NOR gate, we show that this design can be simply extended to implement more complex programmable logic and a functionally complete set of operations. Our findings highlight the potential of atomically thin semiconductors for the development of next-generation low-power electronics.

Exploiting Ferroelectric FETs for Low-Power Non-Volatile Logic-in-memory Circuits

Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits

Computing-In-Memory Using Ferroelectrics: From Single- to Multi-Input Logic

Harnessing Ferroelectrics for Non-Volatile Memories and Logic

A Polarization-Switching, Charge-Trapping, Modulated Arithmetic Logic Unit for In-Memory Computing Based on Ferroelectric Fin Field-Effect Transistors

Nonvolatile Memory Design Based on Ferroelectric FETs.

Reconfigurable aJ-Level Ferroelectric Transistor-Based Boolean Logic for Logic-in-Memory

Nonvolatile Memory and Computing Using Emerging Ferroelectric Transistors.

Nonvolatile Ferroelectric Field-Effect Transistors.

Lowering Area Overheads for FeFET-Based Energy-Efficient Nonvolatile Flip-Flops

Adaptive Circuit Approaches to Low-Power Multi-Level/Cell FeFET Memory

Low Power and Temperature-Resilient Compute-In-Memory Based on Subthreshold-FeFET

Logic Compatible High-Performance Ferroelectric Transistor Memory

Reconfigurable logic-in-memory circuits with ferroelectric nanosheet field-effect transistors

Novel Tunnel- and Ferroelectric-based Devices by Mechanism Engineering for Ultra-Low Power Applications

Memory and Compute-in-Memory Based on Ferroelectric Field Effect Transistors

Logic-in-memory based on an atomically thin semiconductor

Nonvolatile Logic Inverters Based on 2D CuInP2S6 Ferroelectric Field Effect Transistors

Experimental Demonstration of Non-volatile Boolean Logic with Field Configurable 1Fefet-1Rram Technology

Device Circuit Co Design Of Fefet Based Logic For Low Voltage Processors

Design of 2t/cell and 3t/cell Nonvolatile Memories with Emerging Ferroelectric FETs.