Abstract:Ternary content addressable memories (TCAMs) are a special form of computing-in-memory (CiM) circuits that aim to address the so-called memory wall issues by merging the parallel search function with memory blocks. Due to the content addressing nature, TCAMs have been widely utilized for search intensive tasks in low-power, data analytic applications, such as IP routers, associative memories, and learning models. While most state-of-the-art TCAM designs focus on improving the TCAM density by harnessing compact nonvolatile memories (NVMs), little efforts have been spent on reducing and optimizing the energy consumption of the NVM based TCAM. In this paper, by exploiting the Ferroelectric FET (FeFET) as a representative NVM, we propose two compact and energy-aware designs of ferroelectric TCAMs for low power applications. We first introduce a novel 2FeFET based XOR-like gate structure that can also be adopted to other NVMs, and then leverage the structure to propose two TCAM designs that achieve high energy efficiency by either reducing the associated precharge overhead (2FeFET-1T cell), or eliminating the precharge phase typically required by TCAMs (2FeFET-2T cell). We evaluate and compare the designs w.r.t area, search energy and delay at array level with other existing designs, and benchmark the proposed TCAM designs in an associative memory based GPU architecture. The results suggest that the proposed 2FeFET-1T/2FeFET-2T TCAM design consumes 3.03X/8.08X less search energy than the conventional 16T CMOS TCAM, while the proposed design cell area is only 32.1%/39.3% of the latter. Compared with the state-of-the-art 2FeFET only TCAM array, our proposed designs still achieve 1.79X and 4.79X search energy reduction, respectively. Moreover, our proposed designs can achieve, on average, 45.2%/51.5% energy saving compared with the conventional GPU based architecture at the application level.

Nonvolatile Memory Design Based on Ferroelectric FETs.

Harnessing Ferroelectrics for Non-Volatile Memories and Logic

Design of 2t/cell and 3t/cell Nonvolatile Memories with Emerging Ferroelectric FETs.

Energy-Aware Designs of Ferroelectric Ternary Content Addressable Memory.

Nonvolatile Memory and Computing Using Emerging Ferroelectric Transistors.

A 3t/cell Practical Embedded Nonvolatile Memory Supporting Symmetric Read and Write Access Based on Ferroelectric FETs

Exploiting Ferroelectric FETs for Low-Power Non-Volatile Logic-in-memory Circuits

A ferroelectric fin diode for robust non-volatile memory

Nonvolatile Ferroelectric Field-Effect Transistors.

Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits

Eliminating Leakage in Volatile Memory with Anti-Ferroelectric Transistors

Memory and Compute-in-Memory Based on Ferroelectric Field Effect Transistors

Design of Nonvolatile SRAM with Ferroelectric FETs for Energy-Efficient Backup and Restore

Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors

Logic Compatible High-Performance Ferroelectric Transistor Memory

Transposable Memory Based on the Ferroelectric Field-Effect Transistor

Tunable Multi‐Bit Nonvolatile Memory Based on Ferroelectric Field‐Effect Transistors

High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory.

A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FET