Nonvolatile Memory and Computing Using Emerging Ferroelectric Transistors.

Xueqing Li,Longqiang Lai

DOI: https://doi.org/10.1109/isvlsi.2018.00141

2018-01-01

Abstract:Ferroelectric FETs (FeFETs) are emerging as a promising nano device candidate for the next-generation energy-efficient embedded nonvolatile memory (NVM). This promise comes from not only the CMOS-scaling compatibility, but also the compact fusion of logic and non-volatility in a single device that provides opportunities for efficient memory access and in-memory computing. This talk investigates circuit opportunities that harness these intriguing FeFET device features, providing insights into new computation paradigms beyond existing solutions.