Abstract:Ternary content addressable memories (TCAMs) are a special form of computing-in-memory (CiM) circuits that aim to address the so-called memory wall issues by merging the parallel search function with memory blocks. Due to the content addressing nature, TCAMs have been widely utilized for search intensive tasks in low-power, data analytic applications, such as IP routers, associative memories, and learning models. While most state-of-the-art TCAM designs focus on improving the TCAM density by harnessing compact nonvolatile memories (NVMs), little efforts have been spent on reducing and optimizing the energy consumption of the NVM based TCAM. In this paper, by exploiting the Ferroelectric FET (FeFET) as a representative NVM, we propose two compact and energy-aware designs of ferroelectric TCAMs for low power applications. We first introduce a novel 2FeFET based XOR-like gate structure that can also be adopted to other NVMs, and then leverage the structure to propose two TCAM designs that achieve high energy efficiency by either reducing the associated precharge overhead (2FeFET-1T cell), or eliminating the precharge phase typically required by TCAMs (2FeFET-2T cell). We evaluate and compare the designs w.r.t area, search energy and delay at array level with other existing designs, and benchmark the proposed TCAM designs in an associative memory based GPU architecture. The results suggest that the proposed 2FeFET-1T/2FeFET-2T TCAM design consumes 3.03X/8.08X less search energy than the conventional 16T CMOS TCAM, while the proposed design cell area is only 32.1%/39.3% of the latter. Compared with the state-of-the-art 2FeFET only TCAM array, our proposed designs still achieve 1.79X and 4.79X search energy reduction, respectively. Moreover, our proposed designs can achieve, on average, 45.2%/51.5% energy saving compared with the conventional GPU based architecture at the application level.

Memory and Compute-in-Memory Based on Ferroelectric Field Effect Transistors

Computing-in-memory Circuits and Cross-Layer Integrated Design and Optimization: from SRAM to FeFET

Computing-In-Memory Using Ferroelectrics: From Single- to Multi-Input Logic

In-Memory Multi-Bit Multiplication and Accumulation (MAC) Using FeFET for Energy Efficient IoT

FeFET-Based In-Memory Hyperdimensional Encoding Design

An Energy Efficient Floating Point Computing Infrastructure Embedding Ferroelectric Field Effect Transistor Based Ternary Content Addressable Memories

Analog Content Addressable Memory using Ferroelectric: A Case Study of Search-in-Memory

Cross-layer Design for Computing-in-Memory

Energy-Aware Designs of Ferroelectric Ternary Content Addressable Memory.

Low Power and Temperature-Resilient Compute-In-Memory Based on Subthreshold-FeFET

Computing in memory with FeFETs

Enabling Lower-Power Charge-Domain Nonvolatile In-Memory Computing with Ferroelectric FETs

Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits

FeMPIM: A FeFET-Based Multifunctional Processing-in-Memory Cell

Transposable Memory Based on the Ferroelectric Field-Effect Transistor

Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors

Nonvolatile Memory and Computing Using Emerging Ferroelectric Transistors.

Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing

Design and Optimization of FeFET Based CiM for Neural Network Acceleration

Enabling Low-Power Charge-Domain Nonvolatile Computing-in-Memory (CIM) With Ferroelectric Memcapacitor

FePIM: Contention-Free In-Memory Computing Based on Ferroelectric Field-Effect Transistors