Abstract:The exponential growth of data across various domains of human society necessitates the rapid and efficient data processing. In many contemporary data-intensive applications, similarity computation (SC) is one of the most fundamental and indispensable operations. In recent years, In-memory computing (IMC) architectures have been designed to accelerate SC by reducing data movement costs, however, they encounter challenges with signal domain conversion, variation sensitivity, and limited precision. This paper proposes a ferroelectric FET (FeFET) based time-domain (TD) associative memory (AM) for energy efficient SC. Such TD design can convert its output (i.e., time interval) to digits with relatively simple sensing circuitry thus saves large amount of area and energy compared with conventional IMC designs that process analog voltage/current signals. The variable-capacitance (VC) delay chain structure in our design supports quantitative SC and enhances robustness against variations. Furthermore, by exploiting multi-domain ferroelctric FET (FeFET), our design is capable of performing SC on vectors with multi-bit element, enabling support for higher-precision algorithms. Simulation results show that the proposed TD-AM achieves 13.8x/1.47x energy saving of our design compared to CMOS/NVM based TD-IMC designs. Additionally, our design exhibits good robustness in monte carlo simulation with variation extracted from experimental measurements. Investigation on precision of hyperdimensional computing (HDC) show that higher element precision reduces the size of HDC model when considering to achieve same accuracy, indicating an improved efficiency. Benchmarkings against GPU demonstrate in general 2/3 orders of magnitude speedup/energy efficiency improvement of our design. Our proposed multi-bit TD-AM promises energy-efficient quantitative SC for diverse intensive data processing application, especially in energy-constrained scenarios.

Computing in memory with FeFETs

Modeling and Benchmarking Computing-in-Memory for Design Space Exploration.

Computing-in-memory Circuits and Cross-Layer Integrated Design and Optimization: from SRAM to FeFET

CSA-CiM: Enhancing Multi-Functional Computing-in-Memory with Configurable Sense Amplifiers

In-Memory Multi-Bit Multiplication and Accumulation (MAC) Using FeFET for Energy Efficient IoT

Computing-In-Memory Using Ferroelectrics: From Single- to Multi-Input Logic

FeFET-Based In-Memory Hyperdimensional Encoding Design

Memory and Compute-in-Memory Based on Ferroelectric Field Effect Transistors

Analog Content Addressable Memory using Ferroelectric: A Case Study of Search-in-Memory

Cross-layer Design for Computing-in-Memory

A Scalable Design of Multi-Bit Ferroelectric Content Addressable Memory for Data-Centric Computing

Low Power and Temperature-Resilient Compute-In-Memory Based on Subthreshold-FeFET

Energy-Aware Designs of Ferroelectric Ternary Content Addressable Memory.

Enabling Lower-Power Charge-Domain Nonvolatile In-Memory Computing with Ferroelectric FETs

An Ultracompact Single-Ferroelectric Field-Effect Transistor Binary and Multibit Associative Search Engine

A FeFET-based Time-Domain Associative Memory for Multi-bit Similarity Computation

FePIM: Contention-Free In-Memory Computing Based on Ferroelectric Field-Effect Transistors

Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits

Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes

FeFET-based low-power bitwise logic-in-memory with direct write-back and data-adaptive dynamic sensing interface