Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes

Xiwen Liu,John Ting,Yunfei He,Merrilyn Mercy Adzo Fiagbenu,Jeffrey Zheng,Dixiong Wang,Jonathan Frost,Pariasadat Musavigharavi,Giovanni Esteves,Kim Kisslinger,Surendra B Anantharaman,Eric A Stach,Roy H Olsson 3rd,Deep Jariwala
DOI: https://doi.org/10.1021/acs.nanolett.2c03169
2022-09-28
Abstract:The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data-centric processing. Data-centric processing require innovations at the device level to enable novel compute-in-memory (CIM) operations. A key challenge in the construction of CIM architectures is the conflicting trade-off between the performance and their flexibility for various essential data operations. Here, we present a transistor-free CIM architecture that permits storage, search, and neural network operations on sub-50 nm thick Aluminum Scandium Nitride ferroelectric diodes (FeDs). Our circuit designs and devices can be directly integrated on top of Silicon microprocessors in a scalable process. By leveraging the field-programmability, nonvolatility, and nonlinearity of FeDs, search operations are demonstrated with a cell footprint <0.12 μm2 when projected onto 45 nm node technology. We further demonstrate neural network operations with 4-bit operation using FeDs. Our results highlight FeDs as candidates for efficient and multifunctional CIM platforms.
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