Abstract:Power dissipation is one of the most critical issues for nanoelectronic circuits. For low-power logic applications, Tunnel FET (TFET) and ferroelectric (FE) based negative-capacitance FET (NCFET) can break the fundamental limitation of subthreshold swing in conventional MOSFET. In this talk, from the perspective of mechanism engineering, a new kind of steep-slope device with hybrid operation mechanism is presented with the state-of-the-art comprehensive electric properties, fundamentally addressing the issue of low drive current in conventional TFETs [1-3]. Furthermore, a novel energy-efficient TFET-CMOS hybrid foundry platform based on 300nm CMOS baseline process is also demonstrated for power-constraint AIoT applications [4-5]. For FE-HfO2-based NCFET devices, the possibility of NCFET as a steep-slope device for high-speed and low-voltage operation will be re-assessed based on our proposed dynamic negative capacitance theory [6-7]. Besides, by exploiting the inherent physics of FE polarization switching, this talk will present that ferroelectric-based devices can be utilized for ultralow hardware-cost and high energy-efficient solutions for emerging computing applications. As an example, by utilizing the non-volatile polarization switching dynamics and three-terminal structure of hafnia-based FeFET device, we propose novel Leaky-FeFET based designs to mimic biological neurons [8-9], and a novel FeFET-based time-domain computing in memory system with the record highest area and energy efficiency [10]. By combing the features of FE layer with TFET device, a novel ferroelectric TFET (FeTFET) based content addressable memory cell with only one transistor is proposed and experimentally demonstrated [11], showing its great potential for area- and energy-efficient machine learning applications.

Novel Tunnel- and Ferroelectric-based Devices by Mechanism Engineering for Ultra-Low Power Applications

Nonvolatile Ferroelectric Field-Effect Transistors.

Ferroelectric FET Based TCAM Designs for Energy Efficient Computing

HfO<sub>2</sub>-based Ferroelectric Devices for Low Power Applications

Nonvolatile Memory and Computing Using Emerging Ferroelectric Transistors.

Exploiting Ferroelectric FETs for Low-Power Non-Volatile Logic-in-memory Circuits

Ferroelectric Devices for Intelligent Computing

Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies

A Reconfigurable Ferroelectric Transistor as An Ultra‐Scaled Cell for Low‐Power In‐Memory Data Processing

Structural Engineering of H0.5Z0.5O2‐Based Ferroelectric Tunneling Junction for Fast‐Speed and Low‐Power Artificial Synapses

Giant Electroresistance in Ferroelectric Tunnel Junctions Via High-Throughput Designs: Toward High-Performance Neuromorphic Computing.

Recent Progress of Hafnium Oxide-Based Ferroelectric Devices for Advanced Circuit Applications

Device Circuit Co Design Of Fefet Based Logic For Low Voltage Processors

HfO<inf>2</inf>-based Ferroelectric Devices for Low Power Applications

CMOS-Compatible Fabrication of Low-Power Ferroelectric Tunnel Junction for Neural Network Applications

Harnessing Ferroelectrics for Non-Volatile Memories and Logic

A Novel Ambipolar Ferroelectric Tunnel FinFET Based Content Addressable Memory with Ultra-low Hardware Cost and High Energy Efficiency for Machine Learning

CMOS Compatible Low Power Consumption Ferroelectric Synapse for Neuromorphic Computing

Hybrid ferroelectric tunnel junctions: State-of-the-art, challenges and opportunities

High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities

Perspective on ferroelectric, hafnium oxide based transistors for digital beyond von-Neumann computing