Abstract:Power dissipation is one of the most critical issues for nanoelectronic circuits. For low-power logic applications, Tunnel FET (TFET) and ferroelectric (FE) based negative-capacitance FET (NCFET) can break the fundamental limitation of subthreshold swing in conventional MOSFET. In this talk, from the perspective of mechanism engineering, a new kind of steep-slope device with hybrid operation mechanism is presented with the state-of-the-art comprehensive electric properties, fundamentally addressing the issue of low drive current in conventional TFETs [1-3]. Furthermore, a novel energy-efficient TFET-CMOS hybrid foundry platform based on 300nm CMOS baseline process is also demonstrated for power-constraint AIoT applications [4-5]. For FE-HfO2-based NCFET devices, the possibility of NCFET as a steep-slope device for high-speed and low-voltage operation will be re-assessed based on our proposed dynamic negative capacitance theory [6-7]. Besides, by exploiting the inherent physics of FE polarization switching, this talk will present that ferroelectric-based devices can be utilized for ultralow hardware-cost and high energy-efficient solutions for emerging computing applications. As an example, by utilizing the non-volatile polarization switching dynamics and three-terminal structure of hafnia-based FeFET device, we propose novel Leaky-FeFET based designs to mimic biological neurons [8-9], and a novel FeFET-based time-domain computing in memory system with the record highest area and energy efficiency [10]. By combing the features of FE layer with TFET device, a novel ferroelectric TFET (FeTFET) based content addressable memory cell with only one transistor is proposed and experimentally demonstrated [11], showing its great potential for area- and energy-efficient machine learning applications.

Device Circuit Co Design Of Fefet Based Logic For Low Voltage Processors

Exploiting Ferroelectric FETs for Low-Power Non-Volatile Logic-in-memory Circuits

Lowering Area Overheads for FeFET-Based Energy-Efficient Nonvolatile Flip-Flops

Novel Tunnel- and Ferroelectric-based Devices by Mechanism Engineering for Ultra-Low Power Applications

Harnessing Ferroelectrics for Non-Volatile Memories and Logic

NCFET Based Logic for Energy Harvesting Systems

Nonvolatile Memory Design Based on Ferroelectric FETs.

Implementation and Performance Evaluation of Ferroelectric Negative Capacitance FET

22Ffl: A High Performance and Ultra Low Power Finfet Technology for Mobile and Rf Applications

Nonvolatile Ferroelectric Field-Effect Transistors.

Computing with ferroelectric FETs: Devices, models, systems, and applications

HfO<sub>2</sub>-based Ferroelectric Devices for Low Power Applications

Ultra-Low-Power and Performance-Improved Logic Circuit Using Hybrid TFET-MOSFET Standard Cells Topologies and Optimized Digital Front-End Process

Comparative investigation of low-power ferroelectric material embedded with different heterojunction vertical TFET structures

Negative Capacitance Ferroelectric FET Based on Short Channel Effect for Low Power Applications

An Ultra-Low-Voltage Energy-Efficient Dynamic Fully-Regenerative Latch-Based Level-Shifter Circuit with Tunnel-FET & FinFET Devices

Ferroelectric FET Based TCAM Designs for Energy Efficient Computing

Design of 2t/cell and 3t/cell Nonvolatile Memories with Emerging Ferroelectric FETs.

Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies

HfO<inf>2</inf>-based Ferroelectric Devices for Low Power Applications