Abstract:Power dissipation is one of the most critical issues for nanoelectronic circuits. For low-power logic applications, Tunnel FET (TFET) and ferroelectric (FE) based negative-capacitance FET (NCFET) can break the fundamental limitation of subthreshold swing in conventional MOSFET. In this talk, from the perspective of mechanism engineering, a new kind of steep-slope device with hybrid operation mechanism is presented with the state-of-the-art comprehensive electric properties, fundamentally addressing the issue of low drive current in conventional TFETs [1-3]. Furthermore, a novel energy-efficient TFET-CMOS hybrid foundry platform based on 300nm CMOS baseline process is also demonstrated for power-constraint AIoT applications [4-5]. For FE-HfO2-based NCFET devices, the possibility of NCFET as a steep-slope device for high-speed and low-voltage operation will be re-assessed based on our proposed dynamic negative capacitance theory [6-7]. Besides, by exploiting the inherent physics of FE polarization switching, this talk will present that ferroelectric-based devices can be utilized for ultralow hardware-cost and high energy-efficient solutions for emerging computing applications. As an example, by utilizing the non-volatile polarization switching dynamics and three-terminal structure of hafnia-based FeFET device, we propose novel Leaky-FeFET based designs to mimic biological neurons [8-9], and a novel FeFET-based time-domain computing in memory system with the record highest area and energy efficiency [10]. By combing the features of FE layer with TFET device, a novel ferroelectric TFET (FeTFET) based content addressable memory cell with only one transistor is proposed and experimentally demonstrated [11], showing its great potential for area- and energy-efficient machine learning applications.

Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies

ICCAD Tutorial Session Paper Ferroelectric FET Technology and Applications: From Devices to Systems

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Computing with ferroelectric FETs: Devices, models, systems, and applications

Computing-In-Memory Using Ferroelectrics: From Single- to Multi-Input Logic

The Impact of Ferroelectric FETs on Digital and Analog Circuits and Architectures.

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Nonvolatile Memory and Computing Using Emerging Ferroelectric Transistors.

Modelling and Simulations of Ferroelectric Materials and Ferroelectric-Based Nanoelectronic Devices

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Ferroelectric materials for neuroinspired computing applications

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Recent advances, perspectives and challenges in ferroelectric synapses

Emerging Opportunities for 2D Semiconductor/Ferroelectric Transistor‐Structure Devices

Ferroelectric artificial synapses for high-performance neuromorphic computing: Status, prospects, and challenges

Recent Progress in Ferroelectric Synapses and Their Applications

Exploiting Ferroelectric FETs for Low-Power Non-Volatile Logic-in-memory Circuits