Abstract:Among the beyond-complementary metal-oxide-semiconductor (CMOS) devices being explored, ferroelectric field-effect transistors (FeFETs) are considered as one of the most promising. FeFETs are being studied by all major semiconductor manufacturers, and experimentally, FeFETs are making rapid progress. FeFETs also stand out with the unique hysteretic Ids-Vgs characteristic that allows a device to function as both a switch and a nonvolatile (NV) storage element. We exploit this FeFET property to build two categories of fine-grained logic-in-memory (LiM) circuits: 1) ternary content addressable memory (TCAM) which integrates efficient and compact logic/processing elements into various levels of memory hierarchy; 2) basic logic function units for constructing larger and more complex LiM circuits. Two writing schemes (with and without negative supply voltages respectively) for FeFETs are introduced in our LiM designs. The resulting designs are compared with existing LiM approaches based on CMOS, magnetic tunnel junctions (MTJs), resistive random access memories (ReRAMs), ferrorelectric tunnel junctions (FTJs), etc., that afford the same circuit-level functionality. Simulation results show that FeFET-based NV TCAMs offer lower area overhead than MTJ (79%) and CMOS (42% less) equivalents, as well as better search energy-delay products (EDPs) than TCAM designs based on MTJ (149x), ReRAM (1.7x), and CMOS (1.3x) in array evaluations. NV FeFET-based LiM basic circuit blocks are also more efficient than functional equivalents based on MTJs in terms of propagation delay (4.2x) and dynamic power (2.5x). A case study for an FeFET-based LiM accumulator further demonstrates that by employing FeFET as both a switch and an NV storage element, the FeFET-based accumulator can save area (36%) and power consumption (40%) when compared with a conventional CMOS accumulator with the same structure.

Lowering Area Overheads for FeFET-Based Energy-Efficient Nonvolatile Flip-Flops

Advancing Nonvolatile Computing with Nonvolatile NCFET Latches and Flip-Flops.

Exploiting Ferroelectric FETs for Low-Power Non-Volatile Logic-in-memory Circuits

Dual Mode Ferroelectric Transistor Based Non-Volatile Flip-Flops for Intermittently-Powered Systems.

Nonvolatile and Energy-Efficient FeFET-Based Multiplier for Energy-Harvesting Devices.

Enabling Energy-Efficient Nonvolatile Computing with Negative Capacitance FET

Research on low power technology based on Multi Bit Flip Flop

FeFET-Based In-Memory Hyperdimensional Encoding Design

Harnessing Ferroelectrics for Non-Volatile Memories and Logic

Nonvolatile Memory Design Based on Ferroelectric FETs.

Device Circuit Co Design Of Fefet Based Logic For Low Voltage Processors

Design of Nonvolatile SRAM with Ferroelectric FETs for Energy-Efficient Backup and Restore

Adaptive Circuit Approaches to Low-Power Multi-Level/Cell FeFET Memory

Highly Reliable Non-Volatile Logic Circuit Technology and Its Application

Nonvolatile Ferroelectric Field-Effect Transistors.

An 8t/cell FeFET-Based Nonvolatile SRAM with Improved Density and Sub-fJ Backup and Restore Energy

A 0.4 V, 12.2 Pw Leakage, 36.5 Fj/step Switching Efficiency Data Retention Flip-Flop in 22 Nm FDSOI

A compare-and-write ferroelectric nonvolatile flip-flop for energy-harvesting applications

Nonvolatile Memory and Computing Using Emerging Ferroelectric Transistors.

Novel Tunnel- and Ferroelectric-based Devices by Mechanism Engineering for Ultra-Low Power Applications

Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits