Abstract:Cache serves as a temporary data memory module in many general-purpose processors and domain-specific accelerators. Its density, power, speed, and reliability play a critical role in enhancing the overall system performance and quality of service. Conventional volatile memories, including static random-access memory (SRAM) and embedded dynamic random-access memory (eDRAM) in the complementary metal-oxide-semiconductor technology, have high performance and good reliability. However, the inherent leakage in both SRAM and eDRAM hinders further improvement towards smaller feature sizes and higher energy efficiency. Although the emerging nonvolatile memories can eliminate the leakage efficiently, the penalties of lower speed and degraded reliability are significant. This article reveals a new opportunity towards leakage-free volatile static memory beyond the known paradigms of existing volatile and nonvolatile memories. By engineering a double-well energy landscape with the assistance of a clamping voltage bias, leakage-free and refresh-free state retention of volatile memory is achieved for the first time. This new memory is highlighted by both the ultra-low leakage of nonvolatile memories and the speed, energy, and reliability advantages of volatile memories. A proof-of-concept memory is demonstrated using in-house anti-ferroelectric field-effect transistors (AFeFETs), delivering an extrapolated endurance of about 1012 cycles, a retention time of over 10 years, and no subthreshold channel leakage current. Such a new concept of AFeFET-based memory enables an improved balance between density, power, and reliability beyond all existing memory solutions.

A compare-and-write ferroelectric nonvolatile flip-flop for energy-harvesting applications

Analog Content Addressable Memory using Ferroelectric: A Case Study of Search-in-Memory

Nonvolatile and Energy-Efficient FeFET-Based Multiplier for Energy-Harvesting Devices.

A 3us wake-up time nonvolatile processor based on ferroelectric flip-flops

Energy Efficient Data Search Design and Optimization Based on a Compact Ferroelectric FET Content Addressable Memory

Nonvolatile Ferroelectric Field-Effect Transistors.

Lowering Area Overheads for FeFET-Based Energy-Efficient Nonvolatile Flip-Flops

Advancing Nonvolatile Computing with Nonvolatile NCFET Latches and Flip-Flops.

A Ferroelectric Nonvolatile Processor with 46 $\mu $ S System-Level Wake-up Time and 14 $\mu $ S Sleep Time for Energy Harvesting Applications

Nonvolatile Memory Design Based on Ferroelectric FETs.

A 130-Nm Ferroelectric Nonvolatile System-on-Chip with Direct Peripheral Restore Architecture for Transient Computing System

Dual Mode Ferroelectric Transistor Based Non-Volatile Flip-Flops for Intermittently-Powered Systems.

A ReRAM-Based Nonvolatile Flip-Flop With Self-Write-Termination Scheme for Frequent-OFF Fast-Wake-Up Nonvolatile Processors.

Harnessing Ferroelectrics for Non-Volatile Memories and Logic

Multi-state Nonvolatile Capacitances in HfO2-based Ferroelectric Capacitor for Neuromorphic Computing

Enabling Energy-Efficient Nonvolatile Computing with Negative Capacitance FET

A ferroelectric fin diode for robust non-volatile memory

Enabling Low-Power Charge-Domain Nonvolatile Computing-in-Memory (CIM) With Ferroelectric Memcapacitor

A 3t/cell Practical Embedded Nonvolatile Memory Supporting Symmetric Read and Write Access Based on Ferroelectric FETs

Eliminating Leakage in Volatile Memory with Anti-Ferroelectric Transistors

Design and Application of Ferroelectric Non-volatile Logic