Abstract:Among the beyond-complementary metal-oxide-semiconductor (CMOS) devices being explored, ferroelectric field-effect transistors (FeFETs) are considered as one of the most promising. FeFETs are being studied by all major semiconductor manufacturers, and experimentally, FeFETs are making rapid progress. FeFETs also stand out with the unique hysteretic Ids-Vgs characteristic that allows a device to function as both a switch and a nonvolatile (NV) storage element. We exploit this FeFET property to build two categories of fine-grained logic-in-memory (LiM) circuits: 1) ternary content addressable memory (TCAM) which integrates efficient and compact logic/processing elements into various levels of memory hierarchy; 2) basic logic function units for constructing larger and more complex LiM circuits. Two writing schemes (with and without negative supply voltages respectively) for FeFETs are introduced in our LiM designs. The resulting designs are compared with existing LiM approaches based on CMOS, magnetic tunnel junctions (MTJs), resistive random access memories (ReRAMs), ferrorelectric tunnel junctions (FTJs), etc., that afford the same circuit-level functionality. Simulation results show that FeFET-based NV TCAMs offer lower area overhead than MTJ (79%) and CMOS (42% less) equivalents, as well as better search energy-delay products (EDPs) than TCAM designs based on MTJ (149x), ReRAM (1.7x), and CMOS (1.3x) in array evaluations. NV FeFET-based LiM basic circuit blocks are also more efficient than functional equivalents based on MTJs in terms of propagation delay (4.2x) and dynamic power (2.5x). A case study for an FeFET-based LiM accumulator further demonstrates that by employing FeFET as both a switch and an NV storage element, the FeFET-based accumulator can save area (36%) and power consumption (40%) when compared with a conventional CMOS accumulator with the same structure.

Design and Application of Ferroelectric Non-volatile Logic

A Fundamental Study on Nonvolatile Ferroelectric Fpga

A Fundamental Study on Application of FeRAM in FPGA

Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits

Nonvolatile Ferroelectric Field-Effect Transistors.

Nonvolatile Memory and Computing Using Emerging Ferroelectric Transistors.

Computing-In-Memory Using Ferroelectrics: From Single- to Multi-Input Logic

Harnessing Ferroelectrics for Non-Volatile Memories and Logic

Exploiting Ferroelectric FETs for Low-Power Non-Volatile Logic-in-memory Circuits

A Verification Of Nonvolatile Programmable Logic Device

Nonvolatile Memory Design Based on Ferroelectric FETs.

Lowering Area Overheads for FeFET-Based Energy-Efficient Nonvolatile Flip-Flops

Application of Metal-Ferroelectric-Insulator-Semiconductor Field-Effect Transistors (mfisfets) in Non-Volatile Logic Integrated Circuits

Experimental Demonstration of Non-volatile Boolean Logic with Field Configurable 1Fefet-1Rram Technology

Design of 2t/cell and 3t/cell Nonvolatile Memories with Emerging Ferroelectric FETs.

Design of Nonvolatile SRAM with Ferroelectric FETs for Energy-Efficient Backup and Restore

Reconfigurable logic-in-memory circuits with ferroelectric nanosheet field-effect transistors

A ferroelectric fin diode for robust non-volatile memory

Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors

Logic and in-memory computing achieved in a single ferroelectric semiconductor transistor

A Polarization-Switching, Charge-Trapping, Modulated Arithmetic Logic Unit for In-Memory Computing Based on Ferroelectric Fin Field-Effect Transistors