Abstract:Ferroelectric random access memory (FeRAM) is believed to be the most promising candidate for the next generation non-volatile memory due to its fast access time and low power consumption. Fabrication technologies of FeRAM can be divided into two parts: CMOS technologies for circuits which are standard and can be shared with traditional IC process line, and process relating to ferroelectric which is separated with CMOS process and defined as backend module. This paper described technologies for integrating ferroelectric capacitors into standard CMOS, mainly about modeling of ferroelectric capacitors and backend fabrication technologies. Hysteresis loop of the ferroelectric capacitor is the basis for FeRAM to store data. Models to describe this characteristic are the key for the design of FeRAM. A transient behavioral ferroelectric capacitor model based on C-V relation for circuit simulation is developed. The arc tangent function is used to describe the hysteresis loop. “Negative capacitance” phenomenon at reversing points of applied voltage is analyzed and introduced to the model to describe transient behaviors of the capacitor. Compact equivalent circuits are introduced to integrate this model into HSPICE for circuit simulation. Ferroelectric materials fabrication, electrodes integration and etching are the main technologies of FeRAM fabrication process. An metal organic chemical vapor deposition (MOCVD) process is developed to fabricate high quality Pb(Zr1-xTix)O3 (PZT) films. Pt is known to cause the fatigue problems when used as electrodes with PZT. Ir is used as electrodes to improve the fatigue property of PZT based capacitors, and mechanism of the fatigue is analyzed. Hard mask is used to reduce the size of the capacitors and damage caused in etching process. In our process, Al2O3 is developed as hard mask, which simplifies the FeRAM backend integration process.

A Fundamental Study on Application of FeRAM in FPGA

A Fundamental Study on Nonvolatile Ferroelectric Fpga

Design and Application of Ferroelectric Non-volatile Logic

Analog Content Addressable Memory using Ferroelectric: A Case Study of Search-in-Memory

A novel hybrid storage architecture for nonvolatile FPGA

FETRAM. An Organic Ferroelectric Material Based Novel Random Access Memory Cell

Nonvolatile Memory Design Based on Ferroelectric FETs.

Working Principles and Performance Optimization of Nonvolatile 6T2C-SRAM with Hafnia-Based Ferroelectric Capacitors

High-Density and High-Reliability Nonvolatile Field-Programmable Gate Array with Stacked 1D2R RRAM Array

Design of Nonvolatile SRAM with Ferroelectric FETs for Energy-Efficient Backup and Restore

An 8t/cell FeFET-Based Nonvolatile SRAM with Improved Density and Sub-fJ Backup and Restore Energy

Nonvolatile Memory and Computing Using Emerging Ferroelectric Transistors.

A 3t/cell Practical Embedded Nonvolatile Memory Supporting Symmetric Read and Write Access Based on Ferroelectric FETs

Novel RRAM Programming Technology for Instant-on and High-Security FPGAs

Design Space Exploration of FeRAM Bit Cell for DRAM Application

Harnessing Ferroelectrics for Non-Volatile Memories and Logic

Novel Multilevel Non-Destructive-Read-Out (ndro) Ferroelectric Floating-Gate Random Access Memory (Ffram)

Key Technologies for Feram Backend Module

A New 8T Hybrid Nonvolatile SRAM With Ferroelectric FET

FeRAM using Anti-ferroelectric Capacitors for High-speed and High-density Embedded Memory

Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits