A 3t/cell Practical Embedded Nonvolatile Memory Supporting Symmetric Read and Write Access Based on Ferroelectric FETs

Juejian Wu,Hongtao Zhong,Kai Ni,Yongpan Liu,Huazhong Yang,Xueqing Li
DOI: https://doi.org/10.1145/3316781.3317737
2019-01-01
Abstract:Making embedded memory symmetric provides the capability of memory access in both rows and columns, which brings new opportunities of significant energy and time savings if only a portion of data in the words need to be accessed. This work investigates the use of ferroelectric field-effect transistors (FeFETs), an emerging nonvolatile, low-power, deeply-scalable, CMOS-compatible transistor technology, and proposes a new 3-transistor/cell symmetric nonvolatile memory (SymNVM). With ~1.67x higher density as compared with the prior FeFET design, significant benefits of energy and latency improvement have been achieved, as evaluated and discussed in depth in this paper.
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