Abstract:In this big data era, the explosive growth of information puts ultra-high demands on the data storage/computing, such as high computing power, low energy consumption, and excellent stability. However, facing this challenge, the traditional von Neumann architecture-based computing system is out of its depth owing to the separated memory and data processing unit architecture. One of the most effective ways to solve this challenge is building brain inspired computing system with in-memory computing and parallel processing ability based on neuromorphic devices. Therefore, there is a research trend toward the memristors, that can be applied to build neuromorphic computing systems due to their large switching ratio, high storage density, low power consumption, and high stability. Two-dimensional (2D) ferroelectric materials, as novel types of functional materials, show great potential in the preparations of memristors because of the atomic scale thickness, high carrier mobility, mechanical flexibility, and thermal stability. 2D ferroelectric materials can realize resistive switching (RS) because of the presence of natural dipoles whose direction can be flipped with the change of the applied electric field thus producing different polarizations, therefore, making them powerful candidates for future data storage and computing. In this review article, we introduce the physical mechanisms, characterizations, and synthetic methods of 2D ferroelectric materials, and then summarize the applications of 2D ferroelectric materials in memristors for memory and synaptic devices. At last, we deliberate the advantages and future challenges of 2D ferroelectric materials in the application of memristors devices.

Enabling New Computing Paradigms with Emerging Symmetric-Access Memories.

Ultrafast Self-Rectifying Memristors for Advanced In-Memory Computing

Computing-in-memory Circuits and Cross-Layer Integrated Design and Optimization: from SRAM to FeFET

Symmetric 2-D-memory Access to Multidimensional Data.

A 3t/cell Practical Embedded Nonvolatile Memory Supporting Symmetric Read and Write Access Based on Ferroelectric FETs

Circuit Level Memory Technologies and Applications based on 2D Materials

Multifunctional Computing-in-memory SRAM Cells Based on Two-Surface-channel MoS2 Transistors

Emerging 2D Memory Devices for In‐Memory Computing

Two-Direction In-Memory Computing Based on 10T SRAM With Horizontal and Vertical Decoupled Read Ports

Crossbar architecture based on 2R complementary resistive switching memory cell

An isolated symmetrical 2T2R cell enabling high precision and high density for RRAM-based in-memory computing

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing

Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing

Design and Analysis of Crossbar Architecture Based on Complementary Resistive Switching Non-Volatile Memory Cells.

Computing-in-Memory Paradigm Based on STT-MRAM with Synergetic Read/Write-Like Modes

Recent advances in memristors based on two-dimensional ferroelectric materials

Memory and Compute-in-Memory Based on Ferroelectric Field Effect Transistors

Memory Materials and Devices: from Concept to Application

Emerging Nonvolatile Memories to Go Beyond Scaling Limits of Conventional CMOS Nanodevices

Resistive Random Access Memory for Future Information Processing System.

Enabling architectural innovations using non-volatile memory.