Abstract:Silicon-based semiconductor transistors are approaching their physical limits due to shrinking feature sizes. Simultaneously, traditional silicon-based von Neumann architectures exhibit significant latency and power consumption issues in data-centric applications, such as the Internet of Things and artificial intelligence. To tackle these challenges, this study introduces a novel approach: Magnetoresistance Random Access Memory (MRAM) computing in-memory (CIM) using gate-all-around carbon nanotube field-effect transistors (GAA-CNTFET). The proposed MRAM array comprised three transistors and one perpendicular magnetic anisotropy spin-orbit torque magnetic tunnel junction (p-SOT-MTJ) (3T1M) cell and achieves full-array Boolean logic operations and half/full-adder operations. The calculated results can be stored in-situ during the computing phase without requiring additional peripheral circuits. A 16 Kb MRAM was simulated in both GAA-CNTFET/p-SOT-MTJ and 14-nm FinFET/p-SOT-MTJ technologies to examine the effectiveness of the proposed design. Compared to its 14-nm FinFET/p-SOT-MTJ counterparts, the write and computing latencies of the GAA-CNTFET/p-SOT-MTJ CIM macro were reduced by approximately 21% and 20.6%, respectively, while the read and computing energy consumption by approximately 45.3% and 24.7%, respectively. Moreover, the proposed in-memory Boolean logic throughput was 8192 GOPS, which was approximately 160–250 times higher than that of existing CIM solutions, in which only two rows of word lines can be activated.

Resistance-Sum Architecture for Voltage-Controlled SOT-MRAM based Computing-in-Memory With Hybrid References

A SOT-MRAM Based CIM Design with Multi-Bit Resistance-Sum Paradigm and Non-Idealities Tuning Mechanism

A 6T-3M SOT-MRAM for In-Memory Computing with Reconfigurable Arithmetic Operations.

A6T-3MSOT-MRAMforin-memorycomputingwith reconfigurable arithmetic operations

Computing-in-Memory Architecture based on Field-Free SOT-MRAM with Self-Reference Method

HXNOR-PBNN: A Scalable and Parallel Spintronics Synaptic Architecture for Probabilistic Binary Neural Networks

In-MRAM Computing Based on Complementary-Sensing Time-Based Readout Circuit Using Hybrid VGSOT-MTJ/GAA-CNTFET

Demonstration of a NAND-Like SOT-MRAM Multi-Level Cell with Two Operational Modes

A Robust Dual Reference Computing-in-Memory Implementation and Design Space Exploration Within STT-MRAM

A 40nm 150 TOPS/W High Row-Parallel MRAM Compute-in-Memory Macro with Series 3T1MTJ Bitcell for MAC Operation

Toward Low Soft Error Sensitivity and Latency Near Memory Computing with EB MRAM

3T2M Canted-Type X SOT-MRAM: Field-free, High-Energy-efficiency, and High-Read-margin Memory Toward Cache Applications

A High Throughput In-MRAM-Computing Scheme Using Hybrid P-Sot-mtj/gaa-cntfet

A novel dual-reference sensing scheme for computing in memory within STT-MRAM

A CFMB STT-MRAM-Based Computing-in-Memory Proposal with Cascade Computing Unit for Edge AI Devices

An Energy-Efficient Computing-in-Memory (cim) Scheme Using Field-Free Spin-Orbit Torque (SOT) Magnetic RAMs

Spintronic Computing-in-Memory Architecture Based on Voltage-Controlled Spin–Orbit Torque Devices for Binary Neural Networks

Efficient and Robust Nonvolatile Computing-In-Memory Based on Voltage Division in 2T2R RRAM with Input-Dependent Sensing Control

High performance and energy-efficient in-memory computing architecture based on SOT-MRAM

In-Memory Computing Paradigms by Exploiting the Intrinsic Interactions Between STT and SOT

RSACIM: Resistance Summation Analog Computing in Memory with Accuracy Optimization Scheme Based on MRAM