Abstract:Silicon-based semiconductor transistors are approaching their physical limits due to shrinking feature sizes. Simultaneously, traditional silicon-based von Neumann architectures exhibit significant latency and power consumption issues in data-centric applications, such as the Internet of Things and artificial intelligence. To tackle these challenges, this study introduces a novel approach: Magnetoresistance Random Access Memory (MRAM) computing in-memory (CIM) using gate-all-around carbon nanotube field-effect transistors (GAA-CNTFET). The proposed MRAM array comprised three transistors and one perpendicular magnetic anisotropy spin-orbit torque magnetic tunnel junction (p-SOT-MTJ) (3T1M) cell and achieves full-array Boolean logic operations and half/full-adder operations. The calculated results can be stored in-situ during the computing phase without requiring additional peripheral circuits. A 16 Kb MRAM was simulated in both GAA-CNTFET/p-SOT-MTJ and 14-nm FinFET/p-SOT-MTJ technologies to examine the effectiveness of the proposed design. Compared to its 14-nm FinFET/p-SOT-MTJ counterparts, the write and computing latencies of the GAA-CNTFET/p-SOT-MTJ CIM macro were reduced by approximately 21% and 20.6%, respectively, while the read and computing energy consumption by approximately 45.3% and 24.7%, respectively. Moreover, the proposed in-memory Boolean logic throughput was 8192 GOPS, which was approximately 160–250 times higher than that of existing CIM solutions, in which only two rows of word lines can be activated.

A6T-3MSOT-MRAMforin-memorycomputingwith reconfigurable arithmetic operations

A 6T-3M SOT-MRAM for In-Memory Computing with Reconfigurable Arithmetic Operations.

In-Memory Computing Paradigms by Exploiting the Intrinsic Interactions Between STT and SOT

Reconfigurable Processing in Memory Architecture Based on Spin Orbit Torque

High performance and energy-efficient in-memory computing architecture based on SOT-MRAM

Resistance-Sum Architecture for Voltage-Controlled SOT-MRAM based Computing-in-Memory With Hybrid References

A SOT-MRAM Based CIM Design with Multi-Bit Resistance-Sum Paradigm and Non-Idealities Tuning Mechanism

Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell

A Novel In-memory Computing Scheme Based on Toggle Spin Torque MRAM.

A 9T-SRAM In-Memory Computing Macro for Boolean Logic and Multiply-and-accumulate Operations

An STT-MRAM Based Reconfigurable Computing-in-memory Architecture for General Purpose Computing

A High Throughput In-MRAM-Computing Scheme Using Hybrid P-Sot-mtj/gaa-cntfet

An Energy-Efficient Computing-in-Memory (cim) Scheme Using Field-Free Spin-Orbit Torque (SOT) Magnetic RAMs

Boolean Logic Operations Based on Four-Terminal Magnetic Tunnel Junction for Computing in Memory

Implementation of 16 Boolean Logic Operations Based on One Basic Cell of Spin-Transfer-torque Magnetic Random Access Memory

Computing-in-Memory Architecture based on Field-Free SOT-MRAM with Self-Reference Method

Implementation of Highly Reliable and Energy‐Efficient Nonvolatile In‐Memory Computing Using Multistate Domain Wall Spin–Orbit Torque Device

Low Power In-Memory Computing Based On Dual-Mode Sot-Mram

A Survey of MRAM-Centric Computing: from Near Memory to in Memory

An 8T SRAM Array with Configurable Word Lines for In-Memory Computing Operation

Exploring a SOT-MRAM Based In-Memory Computing for Data Processing.